Allicdata Part #: | 497-16498-5-ND |
Manufacturer Part#: |
STU7LN80K5 |
Price: | $ 1.39 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 800V 5A IPAK |
More Detail: | N-Channel 800V 5A (Tc) 85W (Tc) Through Hole IPAK ... |
DataSheet: | STU7LN80K5 Datasheet/PDF |
Quantity: | 1000 |
1 +: | $ 1.26630 |
75 +: | $ 1.02337 |
150 +: | $ 0.92102 |
525 +: | $ 0.71635 |
1050 +: | $ 0.59354 |
Series: | MDmesh™ |
Packaging: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 800V |
Current - Continuous Drain (Id) @ 25°C: | 5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 1.15 Ohm @ 2.5A, 10V |
Vgs(th) (Max) @ Id: | 5V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs: | 12nC @ 10V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 270pF @ 100V |
FET Feature: | -- |
Power Dissipation (Max): | 85W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | IPAK (TO-251) |
Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
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Introduction to STU7LN80K5
The STU7LN80K5 is a low-power, enhanced N-channel MOSFET from STMicroelectronics that belongs to their TrenchFET Power family. The MOSFET is specifically designed for applications that require the reliable control of large currents without the need for switching speed and associated losses which are found with other high-power MOSFETs. The STU7LN80K5’s low RDS(ON) and its tight switching characteristics, together with its low gate charge, ensure that the device is suited for easy and smart switching applications.
Application Fields
The STU7LN80K5 is a low-power MOSFET that is designed for applications such as power distribution, motor control, and switched mode power supplies, as well as general-purpose switching. It is also suitable for load switching of resistive, inductive, and switching loads. The MOSFET also features wireless charging and reverse boost converter implementations.
Working Principle
MOSFETs use capacitors in order to transfer a signal from one side of the device to the other. The STU7LN80K5 MOSFET applies a signal to its gate terminal which, in turn, gives it control over the signal at the drain terminal. When the gate voltage is low, the MOSFET is effectively turned off, preventing any current from flowing. When the gate voltage is increased, the device will start to conduct, allowing current to flow from drain to source. The MOSFET will then be turned off again when the gate voltage decreases. This process is known as pulsed width modulation and is the main method used to control motor speed and switching applications.
As an added benefit, the STU7LN80K5 features an integrated charge pump to reduce switching losses. The charge pump works by allowing the gate voltage to quickly rise when the switch is activated and then maintaining the voltage during operation. This dramatically reduces switching losses compared to conventional MOSFETs, resulting in improved efficiency.
The STU7LN80K5 is also designed to be compatible with low-voltage drive circuits. The device has an integrated logic level low-voltage output that can be triggered with a logic signal, making it suitable for systems with limited voltage supplies, such as battery-powered applications.
In addition to its low RDS(ON), the STU7LN80K5 also offers a very low figure of merit, making it suitable for applications where size is a factor. The STU7LN80K5 is available in a small package that requires less board space than comparable devices.
Conclusion
The STU7LN80K5 is a low-power MOSFET designed for a variety of applications that require reliable control of large currents. Its low RDS(ON), low gate charge, and integrated charge pump make it suitable for applications such as power distribution, motor control, and switched mode power supplies. Additionally, it is ideal for battery-powered applications due to its compatibility with low voltage drive circuits and small package size.
The specific data is subject to PDF, and the above content is for reference
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