Allicdata Part #: | 497-13656-5-ND |
Manufacturer Part#: |
STU7N80K5 |
Price: | $ 3.24 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N CH 800V 6A IPAK |
More Detail: | N-Channel 800V 6A (Tc) 110W (Tc) Through Hole I-PA... |
DataSheet: | STU7N80K5 Datasheet/PDF |
Quantity: | 2738 |
1 +: | $ 2.94210 |
75 +: | $ 2.36368 |
150 +: | $ 2.15359 |
525 +: | $ 1.74388 |
1050 +: | $ 1.47073 |
Series: | SuperMESH5™ |
Packaging: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 800V |
Current - Continuous Drain (Id) @ 25°C: | 6A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 1.2 Ohm @ 3A, 10V |
Vgs(th) (Max) @ Id: | 5V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs: | 13.4nC @ 10V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 360pF @ 100V |
FET Feature: | -- |
Power Dissipation (Max): | 110W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | I-PAK |
Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
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STU7N80K5 is a type of high voltage, high speed enhancement mode n-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor). It is also a single gate MOSFET, which is used for switching, power supply and high current applications. Specifically, STU7N80K5 is used in power converters, AC/DC adapters, DC/DC converters, motors and other high current, high voltage applications.
MOSFET’s working principle is quite simple: the source and the drain of the transistor are the terminals of the power supply, which provide the electricity for the MOSFET to switch. And the gate connects to a voltage source, whose voltage is used to control the flow of current through the MOSFET. When a certain level of voltage is applied to the gate, the channel between the source and the drain is opened and the current flows through the MOSFET, which is known as “on” state. On the contrary, when the gate voltage is removed, the channel is closed and the current stops flowing, which is known as “off” state.
STU7N80K5 has several important features. First, it has a low RDS(on) value. The RDS(on) of STU7N80K5 is only 2.3mΩ, which is much lower than other types of similar MOSFETs. This means that STU7N80K5 can deliver higher current than other MOSFETs at the same gate and drain voltage.
Second, STU7N80K5 has a high power dissipation. The maximum power dissipation of STU7N80K5 is up to 140W, which is much higher than other types of similar MOSFETs. This means that STU7N80K5 can take more current and voltage when compared to other transistors.
Third, STU7N80K5 also has a high switching speed. The switching time of STU7N80K5 ranges from 1μs to 10μs, which is much faster than other types of similar MOSFETs. This means that STU7N80K5 can quickly switch from “on” to “off” state, which is very useful in applications such as Variable Frequency Drives.
Overall, STU7N80K5 is a reliable and cost-efficient MOSFET transistor, which has a low RDS(on) value, high power dissipation, and quick switching speed. Therefore, it is widely used in power converters, AC/DC adapters, DC/DC converters, motors and other high current, high voltage applications.
The specific data is subject to PDF, and the above content is for reference
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