STU7N80K5 Allicdata Electronics
Allicdata Part #:

497-13656-5-ND

Manufacturer Part#:

STU7N80K5

Price: $ 3.24
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N CH 800V 6A IPAK
More Detail: N-Channel 800V 6A (Tc) 110W (Tc) Through Hole I-PA...
DataSheet: STU7N80K5 datasheetSTU7N80K5 Datasheet/PDF
Quantity: 2738
1 +: $ 2.94210
75 +: $ 2.36368
150 +: $ 2.15359
525 +: $ 1.74388
1050 +: $ 1.47073
Stock 2738Can Ship Immediately
$ 3.24
Specifications
Series: SuperMESH5™
Packaging: Tube 
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 3A, 10V
Vgs(th) (Max) @ Id: 5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 13.4nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 100V
FET Feature: --
Power Dissipation (Max): 110W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: I-PAK
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Description

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STU7N80K5 is a type of high voltage, high speed enhancement mode n-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor). It is also a single gate MOSFET, which is used for switching, power supply and high current applications. Specifically, STU7N80K5 is used in power converters, AC/DC adapters, DC/DC converters, motors and other high current, high voltage applications.

MOSFET’s working principle is quite simple: the source and the drain of the transistor are the terminals of the power supply, which provide the electricity for the MOSFET to switch. And the gate connects to a voltage source, whose voltage is used to control the flow of current through the MOSFET. When a certain level of voltage is applied to the gate, the channel between the source and the drain is opened and the current flows through the MOSFET, which is known as “on” state. On the contrary, when the gate voltage is removed, the channel is closed and the current stops flowing, which is known as “off” state.

STU7N80K5 has several important features. First, it has a low RDS(on) value. The RDS(on) of STU7N80K5 is only 2.3mΩ, which is much lower than other types of similar MOSFETs. This means that STU7N80K5 can deliver higher current than other MOSFETs at the same gate and drain voltage.

Second, STU7N80K5 has a high power dissipation. The maximum power dissipation of STU7N80K5 is up to 140W, which is much higher than other types of similar MOSFETs. This means that STU7N80K5 can take more current and voltage when compared to other transistors.

Third, STU7N80K5 also has a high switching speed. The switching time of STU7N80K5 ranges from 1μs to 10μs, which is much faster than other types of similar MOSFETs. This means that STU7N80K5 can quickly switch from “on” to “off” state, which is very useful in applications such as Variable Frequency Drives.

Overall, STU7N80K5 is a reliable and cost-efficient MOSFET transistor, which has a low RDS(on) value, high power dissipation, and quick switching speed. Therefore, it is widely used in power converters, AC/DC adapters, DC/DC converters, motors and other high current, high voltage applications.

The specific data is subject to PDF, and the above content is for reference

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