Allicdata Part #: | STU75N3LLH6-S-ND |
Manufacturer Part#: |
STU75N3LLH6-S |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 30V 75A IPAK |
More Detail: | N-Channel 30V 75A (Tc) 60W (Tc) Through Hole I-PAK |
DataSheet: | STU75N3LLH6-S Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 75A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 5.9 mOhm @ 37.5A, 10V |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 17nC @ 4.5V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 1690pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 60W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | I-PAK |
Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
Series: | DeepGATE™, STripFET™ VI |
Packaging: | Tube |
Part Status: | Obsolete |
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The STU75N3LLH6-S is a single N-channel MOSFET transistor devised by STMicroelectronics. It offers impressive performance in power switching and protection applications, as well as in high-eas current switching and protection applications. Easy to use and reliable, the device also has novel features that make it ideal for certain special usage conditions.
Its basic construction and operation are typical of a MOSFET. The device consists of a single N-channel MOSFET and is built using a p-type substrate. The channel is formed within the substrate and is filled with N-type impurities. A drain connect with the channel connects to the substrate and forms the drain region. The energy band gap between the channel and the drain region can be modified by controlling the voltage applied to the channel.
The device operates on the principle of electron flow. When the gate voltage is low, the electrons are ‘trapped’ within the channel and the drain current is inhibited. When the gate voltage is increased, the band gap between the channel and the drain region is decreased and electrons are allowed to pass from the channel to the drain region. As the drain current increases, so does the output power.
The STU75N3LLH6-S offers superior performance thanks to its sophisticated features. With a 3.3V Gate-Source threshold voltage and high current carrying capacity, the device benefits from a low on-state resistance and low power losses, allowing it to achieve higher power efficiencies. Moreover, the device has an integrated temperature sensor, which enables the device to shut down in case of an over-temperature condition.
The STU75N3LLH6-S is used extensively in a variety of industrial, consumer, and automotive applications. Its obtrusive low on-state resistance makes it particularly suitable for low-side switching applications, such as in power driver circuits. For instance, it is used in automotive systems, such as in lighting dimming in vehicle interiors. The integrated temperature sensor also allows the device to be used in temperature-sensitive applications such as HID lighting systems and motor drive applications.
The device is suitable for use in consumer applications such as power adapters, battery chargers, and communication systems. Its low on-state resistance and dramatic gate-source threshold voltage makes it suitable for high power switching applications, such as in fast charging systems.
The device is also used in industrial applications. Its low on-state resistance and high output power make it ideal for power supplies and motor control applications. The integrated temperature sensor further allows the device to be used in industrial applications where temperature monitoring is critical.
In conclusion, the STU75N3LLH6-S is a single N-channel MOSFET transistor with impressive performance in both industrial and consumer applications. Its main features include an integrated temperature sensor and a high current carrying capacity. Its low on-state resistance and high gate-source threshold voltage make it ideal for high current switching and protection applications.
The specific data is subject to PDF, and the above content is for reference
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