Allicdata Part #: | 497-15249-5-ND |
Manufacturer Part#: |
STU7N105K5 |
Price: | $ 2.30 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 1050V 4A IPAK |
More Detail: | N-Channel 1050V 4A (Tc) 110W (Tc) Through Hole IPA... |
DataSheet: | STU7N105K5 Datasheet/PDF |
Quantity: | 952 |
1 +: | $ 2.09160 |
75 +: | $ 1.67899 |
150 +: | $ 1.52977 |
525 +: | $ 1.23875 |
1050 +: | $ 1.04473 |
Series: | SuperMESH5™ |
Packaging: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 1050V |
Current - Continuous Drain (Id) @ 25°C: | 4A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 2 Ohm @ 2A, 10V |
Vgs(th) (Max) @ Id: | 5V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs: | 17nC @ 10V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 380pF @ 100V |
FET Feature: | -- |
Power Dissipation (Max): | 110W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | IPAK (TO-251) |
Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
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The STU7N105K5 is a single N-channel MOSFET designed for use in a variety of applications. It is commonly used in the design and manufacture of switching and linear power supplies, motor controllers, and signal control circuits.
The STU7N105K5 is a high-performance MOSFET featuring a maximum drain current of 60A and a maximum drain-source voltage of 150V. It has a very low on-resistance and an exceptionally low gate capacitance, making it one of the most efficient MOSFETs available.
The main advantage of the STU7N105K5 is its fast switching speed. It can handle up to 30A in less than 1µs and can also achieve much higher switching speeds than other MOSFETs. This makes it ideal for applications such as inverters and converters.
The main disadvantage of the STU7N105K5 is its relatively high cost. It is also more difficult to control than other MOSFETs due to its low body threshold voltage.
The STU7N105K5 utilizes the Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) technology for its operation. It is a planar (flat) device, with its body consisting of two or three individual layers. The layers consist of an oxide layer, a semiconductor layer, and a metal layer.
The basic working principle of the STU7N105K5 is relatively simple. When an adequate voltage is applied to the gate of the MOSFET, a vacuum is created, allowing the electrons to move freely between the source and the drain. This creates a current flow, thus allowing the MOSFET to switch its output transistor (or transistors) on and off.
The STU7N105K5 is ideal for circuit applications requiring a fast switching speed with low ON resistance. Furthermore, its relatively high current carrying capacity makes it suitable for high-power applications such as inverters.
The STU7N105K5 is an excellent choice for a wide variety of applications, ranging from motor controllers and signal conditioners to power converters and switching power supplies. With its fast switching speeds and low ON resistance, it is a good choice for any application requiring fast switching.
The specific data is subject to PDF, and the above content is for reference
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