STU7NM60N

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Introduction

STU7NM60N is a type of power transistor (also known as field-effect transistor, FET) that is used in high-current, low-voltage switching applications. It is a most commonly used type of FET, having an isolated gate allowing voltage control of current. STU7NM60N is based on a state-of-the-art, advanced, silicon-based MOSFETs (metal oxide semiconductor FETs) with a maximum current rating of 600 amps, a gate-to-source voltage of 60V and a maximum on-state resistance of 7ohms.

Application Field

STU7NM60N is suitable for applications requiring low on-state resistance (RDS) and high output current capability. It is most frequently used in motor, motor speed control and motor drive applications, often in the form of a power integrated circuit (PIC). It can also be found in high-power switch mode applications such as AC-DC adapters and inverters, as well as in power supply designs of audio amplifiers and electronic equipment.

The large, square STU7NM60N package has a high On-Resistance (RDS) to off-state (gate to source) voltage ratio. This makes it suitable for applications that benefit from having a low drain-source on-state resistance, even at higher gate-to-source voltages, giving it excellent efficiency in high-current applications. The STU7NM60N also offers a good standby power since its overall power dissipation decreases as its gate-to-source voltage increases.

Working Principle

A transistor typically consists of two terminals namely source (S) and drain (D) and a gate (G). The source is the connection from which current is sourced or drawn from and the drain is the connection through which current exits the device. A gate voltage is applied to the gate terminal to regulate the current that flows between the source and drain. When sufficient voltage is applied, the device will be turned on, i.e. it is said that the device is in its “on-state”. STU7NM60N operates on the basic principles of transistor. The application of sufficient gate-source voltage (Vgs) causes a potential difference between the drain and source and the current starts to flow from the source to the drain, thus turning the transistor on. When Vgs is decreased, the current through the transistor decreases, thus turning it off.

The ability of STU7NM60N to switch on and off quickly makes it suitable for applications like power supplies, motor drives and switching applications that call for fast response times. In addition, STU7NM60N provides desirable characteristics such as low gate-to-source leakage current, low gate-source capacitance and low On-resistance (RDS) allowing it to provide excellent switching performance.

Conclusion

In conclusion, the STU7NM60N Power MOSFET is designed with state-of-the-art technology and provides excellent switching performance with fast switching speed, low on-state resistance, low gate-source leakage current and low gate-source capacitance. It is widely used in motor, motor speed control and motor drive application, as well as in AC-DC adapters and inverters. This type of transistor is suitable for most applications requiring high-current low-voltage switching, making it an ideal choice for designers of electronics and other power related applications.

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