| Allicdata Part #: | 497-8797-5-ND |
| Manufacturer Part#: |
STW70N10F4 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | STMicroelectronics |
| Short Description: | MOSFET N-CH 100V 65A TO-247 |
| More Detail: | N-Channel 100V 65A (Tc) 150W (Tc) Through Hole TO-... |
| DataSheet: |  STW70N10F4 Datasheet/PDF |
| Quantity: | 1000 |
Specifications
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-247-3 |
| Supplier Device Package: | TO-247-3 |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 150W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 5800pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 85nC @ 10V |
| Series: | DeepGATE™, STripFET™ |
| Rds On (Max) @ Id, Vgs: | 19.5 mOhm @ 30A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 65A (Tc) |
| Drain to Source Voltage (Vdss): | 100V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tube |
Description
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The STW70N10F4 is an advanced type of metal oxide semiconductor field effect transistor (MOSFET) that is commonly used for various applications. This specific type of MOSFET is a single gate device, meaning that there is only one input and one output, making it extremely convenient and versatile for many different types of use cases. The STW70N10F4 is a widely used transistor due to its high performance, low on-resistance, and low gate-capacitance. It also offers a wide range of operating temperatures, making this type of MOSFET a great choice for applications that involve temperatures outside of the normal range.The STW70N10F4 has a variety of applications, but it is most commonly used in power MOSFETs and low-voltage switching operation due to its low on-resistance and low gate capacitance. This type of MOSFET is also well suited for various high-frequency switching applications, such as DC-DC converters, motor drives, and power management systems.The STW70N10F4 works on the principle of a metal oxide semiconductor, which is a type of transistor that is used to control the flow of electrons between two points. The basic structure of a metal oxide semiconductor consists of a source, a drain and a gate. The source and the drain are two power terminals, while the gate is responsible for controlling the flow of charge between them. A voltage applied to the gate determines the amount of current that flows between the source and the drain. When the voltage applied to the gate is increased, the current flowing between the source and the drain is increased, and vice versa. The STW70N10F4 also features an anti-parallel diode, a diode that is connected in series to the gate and drain, which helps to reduce the voltage spikes due to the large capacitance between the drain and gate, known as the Miller effect. This helps to limit the amount of voltage that is applied on the gate and prevents damage to the gate due to over-voltage. The STW70N10F4 is a popular choice for many different types of applications due to its low on-resistance, wide range of operating temperatures, and its ability to handle high-frequency switching. This type of MOSFET is also highly reliable and offers excellent electrical performance. Overall, the STW70N10F4 is a great choice for many different types of applications. Its low on-resistance and wide range of operating temperatures make it a great choice for power MOSFETs and low-voltage switching applications, while its ability to handle high-frequency switching makes it suitable for DC-DC converters, motor drives, and power management systems. The STW70N10F4 also features an anti-parallel diode, which helps to reduce the effects of the Miller effect and protects the gate against over-voltage.
The specific data is subject to PDF, and the above content is for reference
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