STW70N60DM2 Allicdata Electronics
Allicdata Part #:

497-16345-5-ND

Manufacturer Part#:

STW70N60DM2

Price: $ 7.97
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 600V 66A
More Detail: N-Channel 600V 66A (Tc) 446W (Tc) Through Hole TO-...
DataSheet: STW70N60DM2 datasheetSTW70N60DM2 Datasheet/PDF
Quantity: 231
1 +: $ 7.96950
10 +: $ 7.73041
100 +: $ 7.57102
1000 +: $ 7.41163
10000 +: $ 7.17255
Stock 231Can Ship Immediately
$ 7.97
Specifications
Vgs(th) (Max) @ Id: 5V @ 250µA
Package / Case: TO-247-3
Supplier Device Package: TO-247
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 446W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 5508pF @ 100V
Vgs (Max): ±25V
Gate Charge (Qg) (Max) @ Vgs: 121nC @ 10V
Series: MDmesh™ DM2
Rds On (Max) @ Id, Vgs: 42 mOhm @ 33A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The STW70N60DM2 is a device that is a part of the STWiN series of insulated Gate Bipolar Transistor (IGBT) modules from STMicroelectronics. This device offers low power losses, optimized thermal performance, and easy assembly thanks to its integral isolator mounting. It is suitable for a variety of applications, including those in the industrial, automotive, and renewable energy sectors.

The working principle of this device is based on the principles of operation of a regular transistor. It uses two different types of transistors, an N-type and a P-type, to construct a device that can switch a large amount of electrical current with minimal power losses. The N-type and P-type transistors are connected in series, and the junction between them serves as a gate. An electrical signal is applied to this gate, which will cause the current flow through the device either to be reduced or increased, depending on the signal\'s polarity.

The STW70N60DM2 is a device specifically designed for applications in the industrial, automotive, and renewable energy sectors. It is capable of quickly and efficiently switching large amounts of current with low manufacturing and installation cost. It is also used in applications where reliability and performance are of high importance. For example, it is a popular choice for motor drives in automotive and industrial applications as it offers high efficiency, fast switching speeds, and low energy losses.

In addition, this device also offers improved thermal performance. The insulated gate terminal enables the device to quickly dissipate the heat generated by the high power switching, thus allowing the device to maintain optimal operating temperature and be used in high-power applications. The devices also feature a gate-drain voltage of 600V, making them suitable for high-voltage applications.

Overall, the STW70N60DM2 is a highly reliable and efficient device designed for a wide range of applications, including those in the industrial, automotive, and renewable energy sectors. Its low manufacturing and installation costs, coupled with its high efficiency, fast switching speeds, and improved thermal performance, make it a great choice for those looking for a reliable and cost-effective device.

The specific data is subject to PDF, and the above content is for reference

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