
Allicdata Part #: | 497-16345-5-ND |
Manufacturer Part#: |
STW70N60DM2 |
Price: | $ 7.97 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 600V 66A |
More Detail: | N-Channel 600V 66A (Tc) 446W (Tc) Through Hole TO-... |
DataSheet: | ![]() |
Quantity: | 231 |
1 +: | $ 7.96950 |
10 +: | $ 7.73041 |
100 +: | $ 7.57102 |
1000 +: | $ 7.41163 |
10000 +: | $ 7.17255 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-247-3 |
Supplier Device Package: | TO-247 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 446W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 5508pF @ 100V |
Vgs (Max): | ±25V |
Gate Charge (Qg) (Max) @ Vgs: | 121nC @ 10V |
Series: | MDmesh™ DM2 |
Rds On (Max) @ Id, Vgs: | 42 mOhm @ 33A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 66A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The STW70N60DM2 is a device that is a part of the STWiN series of insulated Gate Bipolar Transistor (IGBT) modules from STMicroelectronics. This device offers low power losses, optimized thermal performance, and easy assembly thanks to its integral isolator mounting. It is suitable for a variety of applications, including those in the industrial, automotive, and renewable energy sectors.
The working principle of this device is based on the principles of operation of a regular transistor. It uses two different types of transistors, an N-type and a P-type, to construct a device that can switch a large amount of electrical current with minimal power losses. The N-type and P-type transistors are connected in series, and the junction between them serves as a gate. An electrical signal is applied to this gate, which will cause the current flow through the device either to be reduced or increased, depending on the signal\'s polarity.
The STW70N60DM2 is a device specifically designed for applications in the industrial, automotive, and renewable energy sectors. It is capable of quickly and efficiently switching large amounts of current with low manufacturing and installation cost. It is also used in applications where reliability and performance are of high importance. For example, it is a popular choice for motor drives in automotive and industrial applications as it offers high efficiency, fast switching speeds, and low energy losses.
In addition, this device also offers improved thermal performance. The insulated gate terminal enables the device to quickly dissipate the heat generated by the high power switching, thus allowing the device to maintain optimal operating temperature and be used in high-power applications. The devices also feature a gate-drain voltage of 600V, making them suitable for high-voltage applications.
Overall, the STW70N60DM2 is a highly reliable and efficient device designed for a wide range of applications, including those in the industrial, automotive, and renewable energy sectors. Its low manufacturing and installation costs, coupled with its high efficiency, fast switching speeds, and improved thermal performance, make it a great choice for those looking for a reliable and cost-effective device.
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