STW72N60DM2AG Allicdata Electronics
Allicdata Part #:

497-16130-5-ND

Manufacturer Part#:

STW72N60DM2AG

Price: $ 7.41
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 600V 66A
More Detail: N-Channel 600V 66A (Tc) 446W (Tc) Through Hole TO-...
DataSheet: STW72N60DM2AG datasheetSTW72N60DM2AG Datasheet/PDF
Quantity: 562
1 +: $ 7.40880
10 +: $ 7.18654
100 +: $ 7.03836
1000 +: $ 6.89018
10000 +: $ 6.66792
Stock 562Can Ship Immediately
$ 7.41
Specifications
Vgs(th) (Max) @ Id: 5V @ 250µA
Package / Case: TO-247-3
Supplier Device Package: TO-247
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 446W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 5508pF @ 100V
Vgs (Max): ±25V
Gate Charge (Qg) (Max) @ Vgs: 121nC @ 10V
Series: Automotive, AEC-Q101, MDmesh™
Rds On (Max) @ Id, Vgs: 42 mOhm @ 33A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The STW72N60DM2AG is a silicon-based N-channel MOSFET that is available in a TO-220 AB package. This device is designed for Pulse-Width Modulated (PWM) switching applications and can be used to control DC power in a variety of applications, including power supplies, switch-mode power converting, lighting, and motor control. The device is suitable for both Commutated and Uncommutated operations.

The STW72N60DM2AG device is a type of Field Effect Transistor (FET) known as a Metal Oxide Semiconductor Field-Effect Transistor (MOSFET). It is considered a voltage-controlled switch because, unlike a bipolar junction transistor (BJT), its switching operation does not require a separate current source to drive the transistor’s base. The FET is instead driven by an input voltage between its source and gate terminals. This makes the MOSFET less prone to the non-linear current-voltage behavior that affects BJTs.

The STW72N60DM2AG consists of four terminals: gate (G), drain (D), source (S) and body (B). The two main terminals are the source and drain, and are moderately doped in an N-channel arrangement. The gate is a lightly-doped terminal with a thin dielectric layer isolated from the source. The body is usually tied to the source terminal, and is only used in special situations.

The working principle of a MOSFET is based on the electric field effect. The light doping of the gate creates a field effect that modulates the current flow between the source and drain. When a voltage is applied to the gate, the gate’s electric field will interfere with the silicon lattice and inhibit current flow between the source and drain. This phenomenon is known as depletion, because the electric field has “depleted” the area of charge carriers between the source and drain. When the electric field is reversed, the depletion zone disappears and current can now flow between source and drain.

When the STW72N60DM2AG is used in a power electronic application, the gate voltage is continuously varied between the threshold voltage (V GS (th)) and the safe operational limit (V GS (max)). This produces a continuously adjustable electric field that modulates the current flowing between the source and drain.

The STW72N60DM2AG can be used in Commutated and Uncommutated operations. In commutated operation, the applied gate voltage is low and the device is turned on and off by an external switch. An example of commutated operation is a half bridge switch for motor control, where the device is turned on and off with an SCR. In uncommutated operation, the applied gate voltage is constantly varied to control the power provided to the load. This type of operation is known as Pulse-Width Modulation (PWM).

The STW72N60DM2AG can be used in a variety of power electronics applications, such as switched-mode power supplies, lighting, and motor control. It is a highly efficient, dependable, low-cost solution for these applications.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "STW7" Included word is 17
Part Number Manufacturer Price Quantity Description
STW7NK90Z STMicroelect... -- 706 MOSFET N-CH 900V 5.8A TO-...
STW70N60DM2 STMicroelect... -- 231 MOSFET N-CH 600V 66AN-Cha...
STW7N90K5 STMicroelect... -- 84 N-CHANNEL 800 V, 0.75 OHM...
STW75NF30 STMicroelect... -- 1000 MOSFET N-CH 300V 60A TO-2...
STW7N105K5 STMicroelect... -- 1000 MOSFET N-CH 1050V 4A TO-2...
STW72N60DM2AG STMicroelect... 8.16 $ 562 MOSFET N-CH 600V 66AN-Cha...
STW78N65M5 STMicroelect... 18.31 $ 463 MOSFET N-CH 650V 69A TO24...
STW70N65M2 STMicroelect... -- 1000 MOSFET N-CH 650V 63A TO24...
STW70N60M2 STMicroelect... 10.87 $ 413 MOSFET N-CH 600V 68A TO24...
STW70N60M2-4 STMicroelect... 6.05 $ 1000 POWER MOSFETN-Channel 600...
STW75NF30AG STMicroelect... 2.25 $ 1000 MOSFETN-Channel 300V 60A ...
STW74NF30 STMicroelect... 2.11 $ 1000 MOSFETN-Channel 300V 60A ...
STW7N95K3 STMicroelect... -- 1000 MOSFET N-CH 950V 7.2A TO-...
STW75NF20 STMicroelect... 2.41 $ 550 MOSFET N-CH 200V 75A TO-2...
STW77N65M5 STMicroelect... 16.6 $ 62 MOSFET N-CH 650V 69A TO-2...
STW70N10F4 STMicroelect... -- 1000 MOSFET N-CH 100V 65A TO-2...
STW75N20 STMicroelect... 0.0 $ 1000 MOSFET N-CH 200V 75A TO-2...
Latest Products
IRFL31N20D

MOSFET N-CH 200V 31A D2PAKN-Channel 200V...

IRFL31N20D Allicdata Electronics
IXTT440N055T2

MOSFET N-CH 55V 440A TO-268N-Channel 55V...

IXTT440N055T2 Allicdata Electronics
IXTH14N80

MOSFET N-CH 800V 14A TO-247N-Channel 800...

IXTH14N80 Allicdata Electronics
IXFT23N60Q

MOSFET N-CH 600V 23A TO-268(D3)N-Channel...

IXFT23N60Q Allicdata Electronics
IXTT72N20

MOSFET N-CH 200V 72A TO-268N-Channel 200...

IXTT72N20 Allicdata Electronics
IXFT9N80Q

MOSFET N-CH 800V 9A TO-268N-Channel 800V...

IXFT9N80Q Allicdata Electronics