
Allicdata Part #: | 497-16130-5-ND |
Manufacturer Part#: |
STW72N60DM2AG |
Price: | $ 7.41 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 600V 66A |
More Detail: | N-Channel 600V 66A (Tc) 446W (Tc) Through Hole TO-... |
DataSheet: | ![]() |
Quantity: | 562 |
1 +: | $ 7.40880 |
10 +: | $ 7.18654 |
100 +: | $ 7.03836 |
1000 +: | $ 6.89018 |
10000 +: | $ 6.66792 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-247-3 |
Supplier Device Package: | TO-247 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 446W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 5508pF @ 100V |
Vgs (Max): | ±25V |
Gate Charge (Qg) (Max) @ Vgs: | 121nC @ 10V |
Series: | Automotive, AEC-Q101, MDmesh™ |
Rds On (Max) @ Id, Vgs: | 42 mOhm @ 33A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 66A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The STW72N60DM2AG is a silicon-based N-channel MOSFET that is available in a TO-220 AB package. This device is designed for Pulse-Width Modulated (PWM) switching applications and can be used to control DC power in a variety of applications, including power supplies, switch-mode power converting, lighting, and motor control. The device is suitable for both Commutated and Uncommutated operations.
The STW72N60DM2AG device is a type of Field Effect Transistor (FET) known as a Metal Oxide Semiconductor Field-Effect Transistor (MOSFET). It is considered a voltage-controlled switch because, unlike a bipolar junction transistor (BJT), its switching operation does not require a separate current source to drive the transistor’s base. The FET is instead driven by an input voltage between its source and gate terminals. This makes the MOSFET less prone to the non-linear current-voltage behavior that affects BJTs.
The STW72N60DM2AG consists of four terminals: gate (G), drain (D), source (S) and body (B). The two main terminals are the source and drain, and are moderately doped in an N-channel arrangement. The gate is a lightly-doped terminal with a thin dielectric layer isolated from the source. The body is usually tied to the source terminal, and is only used in special situations.
The working principle of a MOSFET is based on the electric field effect. The light doping of the gate creates a field effect that modulates the current flow between the source and drain. When a voltage is applied to the gate, the gate’s electric field will interfere with the silicon lattice and inhibit current flow between the source and drain. This phenomenon is known as depletion, because the electric field has “depleted” the area of charge carriers between the source and drain. When the electric field is reversed, the depletion zone disappears and current can now flow between source and drain.
When the STW72N60DM2AG is used in a power electronic application, the gate voltage is continuously varied between the threshold voltage (V GS (th)) and the safe operational limit (V GS (max)). This produces a continuously adjustable electric field that modulates the current flowing between the source and drain.
The STW72N60DM2AG can be used in Commutated and Uncommutated operations. In commutated operation, the applied gate voltage is low and the device is turned on and off by an external switch. An example of commutated operation is a half bridge switch for motor control, where the device is turned on and off with an SCR. In uncommutated operation, the applied gate voltage is constantly varied to control the power provided to the load. This type of operation is known as Pulse-Width Modulation (PWM).
The STW72N60DM2AG can be used in a variety of power electronics applications, such as switched-mode power supplies, lighting, and motor control. It is a highly efficient, dependable, low-cost solution for these applications.
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