STW75N20

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-247-3
Supplier Device Package:	TO-247-3
Mounting Type:	Through Hole
Operating Temperature:	-50°C ~ 150°C (TJ)
Power Dissipation (Max):	190W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	3260pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	84nC @ 10V
Series:	STripFET™
Rds On (Max) @ Id, Vgs:	34 mOhm @ 37A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	75A (Tc)
Drain to Source Voltage (Vdss):	200V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

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What is STW75N20

STW75N20 is a general-purpose N-channel MOSFET produced by Infineon Technologies. It is a top-gate and diode-connected vertical-channel power MOSFET with a high side gate driver circuit. This device\'s maximum voltage breakdown is 400V and maximum drain current is 75A. The switching speed of STW75N20 is quite fast, making it suitable for applications where a high speed of operation is needed, such as high frequency switching devices, motor drives, motor controllers, etc.

Application field

STW75N20 is mainly suitable for use in a wide variety of applications where high speed switching devices are needed, such as motor controllers, motor drives, high-speed devices, and other high-current load-driving applications. The device features an intrinsically low on-state resistance, enabling it to offer higher efficiencies in power conversion, frequency control, and overload protection. It is also suitable for use in power supplies, amplifiers, and high voltage switching applications.One potential application of STW75N20 is in switching power supplies. It can be used as a power driver for a wide range of devices, such as CPUs, memory, and other high current digital circuits. The device’s fast switching speed helps reduce power dissipation and increase efficiency when it is used in high speed digital circuits. It is particularly useful in high power applications where high switching frequency is needed.Other applications include portable electronic devices, appliances, infrared heating, and electric vehicle systems.

Working Principle

The operation of the STW75N20 depends upon the charge transfer between the drain, source and the gate. The drain receives a voltage which is then transferred to the source, and this induces an electric field in the MOSFET, causing it to be in an “on” condition, in which current is allowed to flow through the device between the drain and the source.The amount of current which is allowed to flow through the device depends upon the voltage applied to the gate. By changing the voltage applied to the gate, the amount of current which can flow through the device can be changed. In this way, the STW75N20 can be used to regulate the amount of current being applied to a power circuit.The STW75N20 is also suitable for applications requiring single-cycle switching, thanks to its fast switching speeds. When the gate voltage is changed, the device can switch between on and off states in a single cycle. This makes the device suitable for tasks such as commutation of motor drives, and allows high current to be switched off quickly, which is important in applications such as electric vehicle systems.

Conclusion

In conclusion, the STW75N20 is a general-purpose N-channel MOSFET produced by Infineon Technologies. It is suitable for a wide variety of applications where fast switching speeds are needed. It is particularly well-suited for use in switching power supplies, portable electronic devices, amplifiers, and electric vehicle systems. The device features an intrinsically low on-state resistance and is capable of single cycle switching, making it particularly suitable for high current applications where fast switching is necessary.

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