
Allicdata Part #: | 497-14226-5-ND |
Manufacturer Part#: |
STW70N60M2 |
Price: | $ 10.87 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 600V 68A TO247 |
More Detail: | N-Channel 600V 68A (Tc) 450W (Tc) Through Hole TO-... |
DataSheet: | ![]() |
Quantity: | 413 |
1 +: | $ 10.87000 |
10 +: | $ 10.54390 |
100 +: | $ 10.32650 |
1000 +: | $ 10.10910 |
10000 +: | $ 9.78300 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-247-3 |
Supplier Device Package: | TO-247 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 450W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 5200pF @ 100V |
Vgs (Max): | ±25V |
Gate Charge (Qg) (Max) @ Vgs: | 118nC @ 10V |
Series: | MDmesh™ II Plus |
Rds On (Max) @ Id, Vgs: | 40 mOhm @ 34A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 68A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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STW70N60M2 is a field-effect transistor (FET). It is a type of transistor that uses an electric field to control the flow of current via a voltage applied to the gate terminal. The STW70N60M2 is part of ST Microelectronics’ Smart series of MOSFETs, designed to address the growing demand for power-management solutions in a variety of consumer and industrial applications.
STW70N60M2 is a single N-channel Field Effect Transistor (FET) that operates at a steady state drain current of 60A and is capable of handling a maximum drain-source voltage of 600V. It is a high-voltage and high-current FET that has a rain-soaked thermal resistance of 1.26°C/W and an input capacitance of 3,209 pF. The transistor also features a typical gate charge of 117 nC and excellent high-frequency performance with a rise time of 5.6 ns and a fall time of 4.7 ns at a drain-source voltage of 25V and a drain current of 10A.
The STW70N60M2 MOSFET is designed to be used in various applications including switched mode power supplies (SMPS), battery protection systems, and motor control. The device is also suitable for circuit designs that require short switching times, low losses, and low levels of ripple noise. The gate-source voltage range of the STW70N60M2 allows it to be used in a wide range of applications, and its high-voltage rating makes it suitable for use in high-power circuits.
The working principle of a FET is fairly straightforward. When a voltage is applied to the gate terminal, a channel is formed through the substrate material. The size of the channel is proportional to the voltage applied. When a voltage is applied in the drain-source direction, current will flow through the channel, making the FET a voltage-controlled current source. Since the channel width is proportional to the gate voltage, the larger the gate voltage, the higher the current flowing through the channel.
In summary, the STW70N60M2 is a single N-channel FET that offers excellent performance in high-voltage and high-current applications. It has a maximum drain-source voltage rating of 600V, a rain-soaked thermal resistance of 1.26°C/W, and a gate charge of 117 nC. It is suitable for use in switched mode power supplies (SMPS), battery protection systems, and motor control, and its high-frequency performance makes it suitable for designs that require low levels of ripple noise.
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