Allicdata Part #: | STW74NF30-ND |
Manufacturer Part#: |
STW74NF30 |
Price: | $ 2.11 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET |
More Detail: | N-Channel 300V 60A Through Hole TO-247 |
DataSheet: | STW74NF30 Datasheet/PDF |
Quantity: | 1000 |
600 +: | $ 1.92427 |
Vgs(th) (Max) @ Id: | -- |
Package / Case: | TO-247-3 |
Supplier Device Package: | TO-247 |
Mounting Type: | Through Hole |
Operating Temperature: | -- |
Power Dissipation (Max): | -- |
FET Feature: | -- |
Vgs (Max): | -- |
Gate Charge (Qg) (Max) @ Vgs: | 180nC @ 100V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | -- |
Drive Voltage (Max Rds On, Min Rds On): | -- |
Current - Continuous Drain (Id) @ 25°C: | 60A |
Drain to Source Voltage (Vdss): | 300V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
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The STW74NF30 is a single P-Channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) designed for power switching applications. These transistors have been manufactured in the advanced series of N-channel enhancement mode silicon gate power MOSFETs. This device uses an advanced silicon gate MOSFET process to enhance performance of the device over other traditional products.
Application Field
The STW74NF30 is ideal for a wide range of power switching applications, such as in power supplies, DC/DC converters and motor control applications. It can be used as a bridge rectifier in solar panels, and other applications where low on-resistance and low power dissipation are required. It is also suitable for driving high power loads such as IGBTs and power MOSFETs.
In addition to its application in power switching applications, the STW74NF30 can be used in a variety of other applications, such as in low-side switch applications in automotive electronic control modules and signal isolators.
Working Principle
In power MOSFETs, the gate-source voltage (VGS) is the voltage difference between the gate and the source electrodes. The higher the VGS, the higher the drain-source current that can be achieved. This characteristic allows MOSFETs to be used as power switches since they can be switched on and off quickly and easily with the correct values of gate-source voltage.
When the STW74NF30 is turned on, the VGS increases; this increases the gate-source capacitance (CGS). This capacitance allows the device to more easily and quickly switch on and off. As the device is turned off, the VGS decreases and the device will cut off current faster, resulting in a reduced power dissipation. The low on-resistance of the STW74NF30 allows it to dissipate less power in comparison to lower-power MOSFETs.
The STW74NF30 is specially designed to have a low gate charge (Qg) to reduce switching losses. This allows the device to have fast switching times, which reduces the power dissipated during switching, resulting in improved efficiency and performance.
The STW74NF30 also provides a low on-resistance. This low on-resistance reduces the power dissipation of the device, resulting in improved efficiency and better performance. This makes the STW74NF30 an excellent choice for power switching applications.
Conclusion
The STW74NF30 is a single P-Channel MOSFET designed for power switching applications. It has been specially designed to provide fast switching times and low on-resistance, resulting in improved efficiency and better performance. The device is ideal for a wide range of power switching applications and can be used in low-side switch applications in automotive electronic control modules and signal isolators.
The specific data is subject to PDF, and the above content is for reference
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