SUD20N10-66L-GE3 Discrete Semiconductor Products

Vgs(th) (Max) @ Id:	3V @ 250µA
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	TO-252
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	2.1W (Ta), 41.7W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	860pF @ 50V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	30nC @ 10V
Series:	TrenchFET®
Rds On (Max) @ Id, Vgs:	66 mOhm @ 6.6A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	16.9A (Tc)
Drain to Source Voltage (Vdss):	100V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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The SUD20N10-66L-GE3 is a MOSFET from STMicroelectronics. It is a single-gate FET device designed to be used in many different applications, including but not limited to: audio amplifiers, switching regulators, and DC to DC converters. The device has many desirable attributes such as low on-resistance, high speed turn-off characteristic, a low capacitance between the source and drain, and a low power dissipation.

One important use of the SUD20N10-66L-GE3 is in power management circuits. Unfortunately, unlike with other transistor technologies, power management with MOSFETs can be more complicated. To effectively manage power with this type of device, it is key to understand its working principle.

The SUD20N10-66L-GE3 is a voltage-controlled FET. This means that it is controlled by a voltage applied to its gate. The gate-source voltage determines the direction of current flow through the gate. The device has two parts-- an n-channel and a p-channel. When a voltage is applied to the gate, an electric field is created between the n-channel and p-channel which cause charge carriers to move from one side to the other. This, in turn, creates a channel of conduction between the source and the drain, through which a current flows. The amount of current that can flow through this channel is determined by the gate-source voltage. As the gate-source voltage increases, the width of the channel increases, thus allowing more current to flow.

The SUD20N10-66L-GE3 has a number of other attributes that make it well suited for power management applications. For example, it has a low on-resistance, meaning it can deliver more current without consuming as much power as other FETs. Additionally, it has a high-speed turn-off characteristic, meaning it can draw less current from the power source when it is switched off, thus reducing power consumption. Finally, it has a low capacitance between the source and the drain, allowing for higher switching speed and reducing the power loss due to conduction.

All of these features make the SUD20N10-66L-GE3 an ideal choice for many power management applications. Its combination of low power consumption, high switching speed, and low on-resistance make it a great choice for audio amplifiers, switching regulators, and DC to DC converters, among other applications. It is also an important tool for meeting energy efficiency standards set by the US Department of Energy and other organizations.

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