SUD25N15-52-E3 Discrete Semiconductor Products

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SUD25N15-52-E3 is a single-gate FET, or a n-channel enhancement-mode power MOSFET. It is designed to minimize the on-state resistance while providing superior gate withstand voltage.

This device is ideal for low and high side switch applications, as it has an integrated, independently controlled, low-side gate driver circuit. This allows the device to be used in applications such as DC-DC converters and SMPSs where synchronous remote gate drive is typically required.

The device is also suitable for motor control and power management in industrial systems. It is able to provide a high dV/dt immunity and a fast recovery time. The SUD25N15-52-E3 has an operating voltage range from -10V to +60V.

The FET’s maximum drain-source voltage (VDS) is 100V, with a drain current of 32A of continuous current. It has a typical 40nC of total gate charge at 10V, and can handle up to 250V of drain-source voltage.

The SUD25N15-52-E3’s tight tolerance on its on-resistance of 0.5 to 0.9 ohms allow it to be used at higher currents while maintaining low losses. It can dissipate up to 95W of power in an environment with a maximum of 16.9C runtime temperature. The device also has a maximum junction temperature of 150C.

Working Principle

The FET consists of four terminals that are connected to a source, a gate, a drain, and a body. The FET is also connected to a voltage source. The source terminal is connected to the voltage source, while the gate is connected to the control terminal.

When a voltage is applied to the gate it increases the electric field at the oxide-semiconductor interface (the interface between the gate oxide and the substrate). This electric field creates a current channel between the source and the drain terminals. This enhancement of the channel by the applied voltage is called inversion.

The process of inversion is what enables the FET to function as an amplifier or a switch. As the channel is a carry source, the applied voltage will control the conductivity of the channel. Thus, the current flows through the channel will depend on the applied voltage at the gate. As the voltage increases, the conductivity of the channel also increases, thus allowing larger currents to flow through the FET.

The SUD25N15-52-E3’s integrated, independently controlled low-side gate driver circuit allows the device to be used in applications where synchronous remote gate driving is required. This allows the device to be used in DC-DC converter and SMPS applications.

Application Field

The SUD25N15-52-E3 is a premium single-gate FET. Its low on-state resistance and superior gate withstand voltage makes it ideal for low and high side switch applications. It is also used for motor control and power management in industrial systems.

Due to its high dV/dt immunity and fast recovery time, the SUD25N15-52-E3 is suitable for applications such as DC-DC converters, SMPSs, and power supplies. It also has a very robust design and a maximum junction temperature of 150C.

The FET is designed to provide reliable performance in high energy and high temperature applications. Its high tolerance to current and voltage allow it to be used at higher currents while maintaining low losses.

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