| Allicdata Part #: | SUD23N06-31L-T4-E3-ND |
| Manufacturer Part#: |
SUD23N06-31L-T4-E3 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET N-CH 60V TO252 |
| More Detail: | N-Channel 60V 3W (Ta), 100W (Tc) Surface Mount TO... |
| DataSheet: |  SUD23N06-31L-T4-E3 Datasheet/PDF |
| Quantity: | 1000 |
| Vgs(th) (Max) @ Id: | 3V @ 250µA |
| Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package: | TO-252, (D-Pak) |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 3W (Ta), 100W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 670pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 17nC @ 10V |
| Series: | TrenchFET® |
| Rds On (Max) @ Id, Vgs: | 31 mOhm @ 15A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | -- |
| Drain to Source Voltage (Vdss): | 60V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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SUD23N06-31L-T4-E3 is an advanced-level power MOSFET with an integrated power management function. Digital sensors, automotive electronics, consumer and industrial electronics, and power switches all require the current-limiting protection provided by this type of device. The SUD23N06-31L-T4-E3 is designed to reduce losses of power and dissipate heat, making it an ideal choice for a wide range of applications.
The SUD23N06-31L-T4-E3 is a high-isolation, gate-controlled power MOSFET with a total output current of 21 mA. The operating voltage range from 4.5 to 45.5 volts allows for maximum flexibility in an application. The device is well suited for use in harsh environments due to its high-withstand voltage characteristics.
The SUD23N06-31L-T4-E3 can be used for its unique current-limiting protection in applications such as headlights, auto start/stop systems, and motor drives. The device can be used in a range of high power, high current applications as a means of preventing overloads, ensuring the safe operation of the integrated circuit components. Additionally, the device can be used to control the power supply to other components in the system. This ensures a steady current to further reduce operating losses.
The working principle of the SUD23N06-31L-T4-E3 is based on the MOSFET’s voltage-dependent conduction capability. The device contains a gate capacitance, an input pin (Vin), and a drain pin (Vout). The gate capacitance is charged when the input voltage increases and produces a low on-state resistance, allowing the device to switch on. When the current reaches its maximum, the device will switch off automatically, limiting the current flow and protecting the system.
The device offers high dependability and reliability thanks to its high robustness, low RDS(on), and low Qrr values, ensuring that the circuit is constantly protected from overloading or short-circuiting. Additionally, the SUD23N06-31L-T4-E3 has a high dielectric strength allowing it to be used in extreme operating temperature. This further enhances the overall reliability of the device.
In conclusion, the SUD23N06-31L-T4-E3 is an advanced power MOSFET specifically designed for current-limiting protection applications. Its high-withstand voltage capability and wide operating voltage range make it a great choice for automotive, consumer, industrial, and power applications. Additionally, its integrated current-limiting protection makes it extremely reliable and dependable, perfect for use in harsh environments.
The specific data is subject to PDF, and the above content is for reference
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