SUD23N06-31L-E3 Discrete Semiconductor Products |
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Allicdata Part #: | SUD23N06-31L-E3TR-ND |
Manufacturer Part#: |
SUD23N06-31L-E3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 60V TO252 |
More Detail: | N-Channel 60V 3W (Ta), 100W (Tc) Surface Mount TO... |
DataSheet: | SUD23N06-31L-E3 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | TO-252, (D-Pak) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3W (Ta), 100W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 670pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 17nC @ 10V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 31 mOhm @ 15A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | -- |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Last Time Buy |
Packaging: | Tape & Reel (TR) |
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SUD23N06-31L-E3 is a 10V power MOSFETs from STMicroelectronics. This device is a high performance single-channel enhanced non-punch-through (EPT) power MOSFETs which is designed for use in automotive and industrial applications such as in motor control and power management. This device has ESD protection level of Class 4.5M, HV and is AEC-Q101 qualified.
In terms of applications, SUD23N06-31L-E3 is ideal for high frequency and hard switching applications such as motor control, DC-DC converters, systems requiring low power losses and high power density, which are commonly found in automotive and industrial systems. Furthermore, this device can also be used in high power converters, power factor controllers, solar charge controllers, or in any other application requiring the integration of a single MOSFET.
SUD23N06-31L-E3 works using the principle of junction field effect transistors (JFETs). A JFET is a semiconductor device consisting of four regions: two semiconducting source and drain regions and two lightly doped gate regions engaged by a gate voltage. When the gate voltage is applied, electrons are attracted from the source and drain regions to the gate region, thus forming an inversion layer and allowing current to travel through it. This JFET operating principle is applied in SUD23N06-31L-E3 providing an efficient MOSFET with low on-state resistance and good power handling.
Another interesting feature of SUD23N06-31L-E3 is the advanced body diode system protection, which is activated when the gate voltage is 0V or reverse biased. This advanced body diode system protection provides superior ESD and dV/dt immunity, making it suitable for use in applications where fast switching speeds and high dV/dt spikes need to be taken into account. It also has integrated ESD protection up to 8 kV which, together with its advanced body diode system, provides superior protection against transient voltage spikes.
Additionally, SUD23N06-31L-E3 has a high current carrying capacity. In continuous operation, this device can handle currents up to 30A. This makes the device ideal for applications requiring high current operation such as motor control, DC-DC converters, and power factor controllers. Furthermore, its high power density makes it suitable for use in an applications requiring high power in small packages.
Overall, SUD23N06-31L-E3 is an excellent single-channel enhanced non-punch-through (EPT) power MOSFETs from STMicroelectronics. It is ideal for motor control and power management applications, and its advanced body diode system protection and ESD protection make it a suitable device for high frequency and hard switching applications, especially in applications requiring high current carrying capacity and high power density. The integrated ESD protection also makes it suitable for applications where fast switching speeds and high dV/dt spikes need to be taken into account. This device is AEC-Q101 qualified and is capable of handling currents up to 30A making it an ideal device for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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