SUD25N15-52-T4-E3 Allicdata Electronics
Allicdata Part #:

SUD25N15-52-T4-E3-ND

Manufacturer Part#:

SUD25N15-52-T4-E3

Price: $ 1.23
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 150V 25A TO252
More Detail: N-Channel 150V 25A (Tc) 3W (Ta), 136W (Tc) Surface...
DataSheet: SUD25N15-52-T4-E3 datasheetSUD25N15-52-T4-E3 Datasheet/PDF
Quantity: 1000
2500 +: $ 1.10138
Stock 1000Can Ship Immediately
$ 1.23
Specifications
Series: TrenchFET®
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Rds On (Max) @ Id, Vgs: 52 mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1725pF @ 25V
FET Feature: --
Power Dissipation (Max): 3W (Ta), 136W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-252, (D-Pak)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Description

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SUD25N15-52-T4-E3 is a power MOSFET that can be used in various applications ranging from low-side switching to high-side switching. It is typically used in applications where power efficiency is a key factor, such as in automotive and lighting applications. The MOSFET can be used as either a low-side switch or a high-side switch depending on the application. It can also be used as an inverter and is rated for up to 52V of drain-to-source voltage.

SUD25N15-52-T4-E3 is a single-channel, enhancement mode MOSFET. An enhancement mode MOSFET has an insulated gate that remains non-conducting until a high voltage is applied to the gate. This high voltage is typically supplied by a separate power source, such as a battery or power supply, and it is used to turn the MOSFET on and off. When the voltage that is applied to the gate is high enough, the MOSFET will become conducting and the current will flow through the MOSFET. When the gate voltage is removed, the MOSFET goes back to being non-conducting.

The SUD25N15-52-T4-E3 is a low-threshold MOSFET. Low threshold MOSFETs have a gate voltage threshold that is lower than regular MOSFETs, making them better suited for applications that require low power consumption, such as in microcontrollers and in small portable devices. The threshold voltage of the SUD25N15-52-T4-E3 is only 2.5 volts, which means it can be operated using a small battery or power supply.

The SUD25N15-52-T4-E3 has a maximum drain-source resistance at 25°C (TD) of 15 ohms. This resistance is important to keep in mind when selecting a power MOSFET, as it determines how much power can be efficiently switched. The lower the resistance, the more efficient the MOSFET. The SUD25N15-52-T4-E3 also has a current rating of 28A and a maximum power rating of 300W.

The SUD25N15-52-T4-E3 is a versatile power MOSFET that can be used in a wide range of applications. It is ideal for use in low-side switching and high-side switching, as well as in inverter applications. Additionally, it is well-suited for applications that require low power consumption, as it has a low gate voltage threshold of only 2.5 volts. Finally, it has a low resistance of 15 ohms and a maximum power rating of 300W, which makes it a great choice for applications that require more efficient power switching.

The specific data is subject to PDF, and the above content is for reference

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