SUD23N06-31-GE3 Discrete Semiconductor Products |
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Allicdata Part #: | SUD23N06-31-GE3TR-ND |
Manufacturer Part#: |
SUD23N06-31-GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 60V 21.4A TO-252 |
More Detail: | N-Channel 60V 21.4A (Tc) 5.7W (Ta), 31.25W (Tc) Su... |
DataSheet: | SUD23N06-31-GE3 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | TO-252, (D-Pak) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 5.7W (Ta), 31.25W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 670pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 17nC @ 10V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 31 mOhm @ 15A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 21.4A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The SUD23N06-31-GE3 device is a high-speed N-Channel enhancement-mode Field Effect Transistor (FET). It is a single, low-impedance, switch-mode transistor featuring low power consumption, fast switching times and low on-state resistance. These characteristics make the SUD23N06-31-GE3 suitable for various applications, including motor control, power management, audio amplification, and frequency conversion.
The SUD23N06-31-GE3 features an N-channel MOSFET, which is a type of transistor that uses metal oxide semiconductor (MOS) technology as opposed to a bipolar junction transistor (BJT). This type of transistor uses an electric field to control the electrical characteristics of a channel of electrons instead of the current control mechanism used by BJTs. As a result, MOSFETs offer faster switching speeds, lower on-state resistance and higher throughput than BJTs.
The SUD23N06-31-GE3 device is rated for a maximum drain current of 23A, has a maximum drain-source voltage of 20V, and has a maximum drain-source resistance (Rds-on) of 0.06 ohms. This product is available in an extremely small footprint, making it ideal for high-density PCB designs. It is rated for an operating temperature range of -55°C to +175°C and has a maximum junction temperature of 225°C.
The working principle of the SUD23N06-31-GE3 device can be understood by considering the structure of an N-channel MOSFET. The basic layout of the MOSFET is a long, narrow channel created by two crossed gates separated by a very thin layer of semi-insulating material. When a voltage is applied to the gates of the MOSFET, the electrons in the channel start to move, thus allowing current to flow through the device. The amount of current flowing through the device can be controlled by the voltage applied to the gates.
The SUD23N06-31-GE3 is primarily used in a variety of applications such as load switching, motor control, audio amplification, and frequency conversion. These devices are often utilized in applications that require low power consumption, fast switching times, and low on-state resistance. Motor and power management applications often use the SUD23N06-31-GE3 device to control the power supply, while audio applications such as amplifier circuits and eq’s usually employ the SUD23N06-31-GE3 to drive the output stage. Frequency converter applications often use the SUD23N06-31-GE3 to increase the frequency of an input signal by employing the transistor’s fast switching speeds.
The SUD23N06-31-GE3 device is a high-performance N-channel transistor ideal for a variety of applications. It features low power consumption, fast switching times, and low on-state resistance, making it suitable for a wide range of applications such as power management, motor control, audio amplification, and frequency conversion.
The specific data is subject to PDF, and the above content is for reference
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