SUM40010EL-GE3 Discrete Semiconductor Products |
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Allicdata Part #: | SUM40010EL-GE3TR-ND |
Manufacturer Part#: |
SUM40010EL-GE3 |
Price: | $ 1.24 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 40V 120A D2PAK |
More Detail: | N-Channel 40V 120A (Tc) 375W (Tc) Surface Mount D²... |
DataSheet: | SUM40010EL-GE3 Datasheet/PDF |
Quantity: | 1000 |
800 +: | $ 1.12968 |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D²PAK (TO-263) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 375W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 11155pF @ 30V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 230nC @ 10V |
Series: | ThunderFET® |
Rds On (Max) @ Id, Vgs: | 1.6 mOhm @ 30A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 120A (Tc) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The SUM40010EL-GE3 is a member of the Vishay Siliconix PowerTrench MOSFET family of high-performance power MOSFETs. These devices are designed to provide advanced switching performance and high output current capability in the most commonly used MOSFET packages. Because of their high efficiency and low on-resistance, they are well-suited for switching applications, such as DC-DC converters and power supplies.
As part of the PowerTrench family, the SUM40010EL-GE3 is ideal for high frequency switching applications, such as power supplies. The device offers very low resistance and low inductance due to its low gate charge. This low gate charge MOSFET features a low Rdson of 0.0200 Ω and provides a low maximum operating temperature of 170°C. Additionally, it has a maximum drain-source breakdown voltage (Vds) of 100 V, a maximum drain current of 100 A typical, and is rated for maximum power dissipation (PD) of 780 W.
The device works well with a range of control equipment and logic such as MICs and voltage-mode logic controllers (VMLs). It includes both the built-in self-protection (BISP) and built-in overvoltage protection (BOP) features, allowing it to self-protect from overvoltage and shorts. These features provide reliable switching performance without the need for external components.
The working Principle of an enhancement-mode MOSFET such as the SUM40010EL-GE3 is quite simple. The current flowing through the MOSFET is determined by the voltage applied to the gates. When the gates are charged, an electric field is created that accelerates the electrons from the source region to the drain region, resulting in a controlled current flow between the source and the drain. When the gate voltage is reversed, this electric field is destroyed, so that the electrons stop travelling, and no current is allowed to pass through. This principle is used to control the flow of power in all sorts of electronic devices, including switching power supplies, motor control applications, and many other types of circuits.
The SUM40010EL-GE3 is a versatile, high-performance power MOSFET ideal for a variety of applications in both commercial and industrial settings. It is an excellent choice for power supplies, motor control, and other applications that require high-efficiency, low-impedance switching. In addition, it offers rugged construction and advanced features such as overvoltage protection, making it a reliable, long-term solution for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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