SUM45N25-58-E3 Allicdata Electronics

SUM45N25-58-E3 Discrete Semiconductor Products

Allicdata Part #:

SUM45N25-58-E3TR-ND

Manufacturer Part#:

SUM45N25-58-E3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 250V 45A D2PAK
More Detail: N-Channel 250V 45A (Tc) 3.75W (Ta), 375W (Tc) Surf...
DataSheet: SUM45N25-58-E3 datasheetSUM45N25-58-E3 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (D2Pak)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3.75W (Ta), 375W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 5000pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
Series: TrenchFET®
Rds On (Max) @ Id, Vgs: 58 mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Drain to Source Voltage (Vdss): 250V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The SUM45N25-58-E3 is an N-Channel MOSFET (metal-oxide-semiconductor field-effect transistor) designed for high-voltage and high-current applications. A MOSFET is a three-terminal field-effect transistor that uses an electric field to control the amount of current that flows through the device. It is one of the most common types of transistor used in modern electronics and is found in all sorts of electronic components, from basic logic gates to complex integrated circuits. The SUM45N25-58-E3 has a maximum drain-source voltage of 58V and a continuous drain current that can reach up to 25A.

The work of the SUM45N25-58-E3 is mainly dependant on the operation of its N-Channel. The N-Channel is the active drooping region between the source and the drain. This area is made of a thin layer of silicon dioxide, an insulator, and a thin layer of doped silicon. When the gate is charged, it establishes an electric field that acts to reduce the thickness of the insulating layer and allows electrons to flow through the channel. As the voltage is increased, the electric field becomes stronger and more electrons will flow freely through the channel. This is the principle by which the MOSFET operates.

The SUM45N25-58-E3 is mainly used for high-power and high-current applications, such as motor controls, Automotive body electronic systems and start/stop onboard networks. It can also be used in robotics, lighting, heating, and ventilation system. Additionally, it is ideal for high-side injecting and current sensing applications. The SUM45N25-58-E3 has impressive thermal capabilities and is capable of operating in temperatures up to 175°C, making it perfect for many industrial applications.

The SUM45N25-58-E3 is one of the most versatile transistors on the market and is used in a variety of different applications. Its impressive high-voltage and high-current capabilities makes it perfect for a wide range of applications while its thermal capabilities ensure that it can operate reliably even in extreme conditions. It is one of the most popular choices for many electrical and electronics projects due to its impressive performance and versatility.

The specific data is subject to PDF, and the above content is for reference

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