SUM40N10-30-E3 Discrete Semiconductor Products

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Description:

The SUM40N10-30-E3 is a single N-channel logic level MOSFET from the Switching Path Series. It is primarily used in power circuits for low-side switching. It features an exceptionally low on-resistance, a relatively low input capacitance, and a low internal gate to drain capacitance.

Application Field:

The SUM40N10-30-E3 is primarily used in power circuits for low-side switching. It can be used in applications such as motor control, lighting control, battery management, DC/DC converters and power supplies. It is particularly suited to automotive applications that require a low on-resistance, a low input capacitance, and a low internal gate to drain capacitance. Other applications include Class D audio amplifiers, RF switching, and low side switches.

Working Principle:

The SUM40N10-30-E3 is a single N-channel MOSFET. It uses the principle of metal oxide semiconductor field-effect transistors (MOSFETs) to enable low-side switching. It has an exceptionally low on-resistance, a relatively low input capacitance, and a low internal gate to drain capacitance. When it is "on," high current can flow from the drain to the source, allowing the device to switch on loads with low power loss.

The on-resistance of the device is determined by the ratio of the gate overdrive voltage and the threshold voltage. The lower this ratio, the lower the on-resistance. The input capacitance is determined by the gate voltage as well, and is also reduced by increasing the gate voltage. The internal gate to drain capacitance is reduced by using low-threshold devices.

When the device is turned off, the voltage across it is zero and the current flow is blocked. This is known as the “OFF” state. In this state, the device is said to be in the “cut-off” region. This can be achieved by applying a negative voltage to the gate of the device, which causes the electrical field between the gate and the drain to be zero.

The SUM40N10-30-E3 has a low voltage threshold, which makes it suitable for low voltage applications. It also has a low gate charge, resulting in low power dissipation and reduced switching losses. This makes the device well-suited for low-side switching. The device also features a low internal gate to drain capacitance, reducing switching losses and improving efficiency.

The SUM40N10-30-E3 is also designed to have an enhanced dv/dt capability, making it suitable for use in a broad range of applications. It has a rugged construction, featuring an optimized drive level that aids its performance in applications that require high speed switching.

In summary, the SUM40N10-30-E3 is a single N-channel logic level MOSFET from the Switching Path Series. It is mainly used in power circuits for low-side switching and is characterized by an exceptionally low on-resistance, a relatively low input capacitance, and a low internal gate to drain capacitance. The device features a low voltage threshold, a low gate charge, and an enhanced dv/dt capability, making it suitable for a broad range of low-side switching applications.

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