SUM40N15-38-E3 Discrete Semiconductor Products |
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Allicdata Part #: | SUM40N15-38-E3TR-ND |
Manufacturer Part#: |
SUM40N15-38-E3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 150V 40A D2PAK |
More Detail: | N-Channel 150V 40A (Tc) 3.75W (Ta), 166W (Tc) Surf... |
DataSheet: | SUM40N15-38-E3 Datasheet/PDF |
Quantity: | 1000 |
Series: | TrenchFET® |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 150V |
Current - Continuous Drain (Id) @ 25°C: | 40A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
Rds On (Max) @ Id, Vgs: | 38 mOhm @ 15A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 60nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 2500pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 3.75W (Ta), 166W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | TO-263 (D2Pak) |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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The SUM40N15-38-E3 is a type of a single-gate insulated-gate bipolar transistor (IGBT). It is a device which combines a MOSFET for the control of current with a bipolar power transistor for conduction of high voltage. Such a configuration results in the advantages of both its components. It provides high switching speed and high breakdown voltage together with low power consumption, making it one of the most commonly used devices in various fields.
In terms of its application, the SUM40N15-38-E3 is mainly used in the power conversion and motor control field, including AC/DC converters, SMPSs (Switched-Mode Power Supplys), UPSs (Uninterruptible Power Supplies), soft starters, inverters, converters, as well as motor controls like servo drives, brushless motors and so on.
The working principle of the SUM40N15-38-E3 is based on the MOSFET principle. It consists of three main parts: the gate, the collector, and the emitter, which are insulated from one another. When the gate is energized, it charges the transistor, which in turn allows current to flow through the collector and the emitter. The current passing through the transistor can be controlled by the voltage applied to the Gate, making it possible to switch the current flow on and off.
The conduction speed is determined by the gate charge, which is the amount of current needed to charge or discharge the capacitance of the gate. This is typically relatively small, making this type of transistor well suited for high speed switching applications. Furthermore, the SUM40N15-38-E3 has a very low forward voltage drop, which results in low power consumption. This makes it ideal for applications where power efficiency is important, such as in automotive systems.
The SUM40N15-38-E3 is also characterized by its high breakdown voltage, which provides the device with a high level of protection against voltage surges. This provides a higher level of safety when working with high voltage, making it an ideal choice for applications such as power supplies and motor control.
Overall, the SUM40N15-38-E3 is a single-gate insulated-gate bipolar transistor, which is well suited for power conversion and motor control applications. Its unique features such as high switching speed, low power consumption, high breakdown voltage and low forward voltage drop make it an ideal choice for a wide range of applications, making it one of the most popular devices in the market today.
The specific data is subject to PDF, and the above content is for reference
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