SUM40N02-12P-E3

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

SUM40N02-12P-E3 Application Field and Working Principle

The SUM40N02-12P-E3 is a MOSFET (metal-oxide semiconductor field effect transistor) that belongs to the single-status category. Designed by Infineon Technologies, this device is a N-channel MOSFET and is integrated with premium features that make it suitable for a wide range of applications requiring power switching and/or amplification control.

Construction

The construction of the SUM40N02-12P-E3 is simple. It consists of two independent terminals (source and drain) and a gate terminal which controls the current flow between the sources and the drains. The drain terminal is the output of this device, while the source terminal is the input. The gate terminal is used to control the output signal given to the drain terminal using a high or low input signal.

Features and Characteristics

The SUM40N02-12P-E3 comes with many useful features. It has a breakdown voltage of 40V and an on-resistance of 1.2Ω, which makes it perfect for high-current applications. It also consists of a low gate-charge of 35nC and a low gate-threshold voltage of 0.7V. Finally, it has a maximum power dissipation of 3.6W, making it suitable for applications requiring power-switching.

Applications

The SUM40N02-12P-E3 is commonly used in a variety of switching and control applications. It is often used in power switching applications such as DC to DC converters, AC to DC converters, and motor control. It may also be used in relay circuits to control signal states and in power supply designs.

Working Principle

The MOSFET works on the principle of a depletion-mode transistor. When an electric current is applied to the gate terminal, it induces a voltage drop in the channel connecting the source and the drain. This changes the resistance of the channel and thus, the current flow. Depending on the level of the current applied, the device either shuts off or allows current flow.

When the gate voltage is low, the transistor is off, and there is no current flowing through the channel. This is known as the cut-off region. When the gate voltage is increased, the transistor enters the saturation region, and current starts flowing through the channel. This is the on-state of the transistor.

Conclusion

The SUM40N02-12P-E3 is a MOSFET that belongs to the single-status category. It has many beneficial features, such as a breakdown voltage of 40V and an on-resistance of 1.2Ω, a low gate-charge of 35nC and a low gate-threshold voltage of 0.7V, and a maximum power dissipation of 3.6W, making it suitable for a variety of applications requiring power switching or control. It works based on the principle of a depletion-mode transistor, and it can be used in a variety of applications, such as DC to DC converters, AC to DC converters, relay circuits, motor control, and power supply designs.

The specific data is subject to PDF, and the above content is for reference