SUM47N10-24L-E3 Discrete Semiconductor Products |
|
Allicdata Part #: | SUM47N10-24L-E3TR-ND |
Manufacturer Part#: |
SUM47N10-24L-E3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 100V 47A D2PAK |
More Detail: | N-Channel 100V 47A (Tc) 3.75W (Ta), 136W (Tc) Surf... |
DataSheet: | SUM47N10-24L-E3 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | TO-263 (D2Pak) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.75W (Ta), 136W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2400pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 60nC @ 10V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 24 mOhm @ 40A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 47A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The SUM47N10-24L-E3 is a high-performance Field-Effect Transistor (FET) from a series of power MOSFETs manufactured by Advanced Power Electronics Corporation. This device is designed for high switching efficiency, ultra-low on-resistance and fast switching speeds. It features a tight parameter distribution for higher reliability, making it suitable for use in a variety of applications including telecommunications, automotive, solar and industrial power systems.
The SUM47N10-24L-E3 is a single n-channel enhancement mode (normally-off) power MOSFET with a maximum drain-source voltage of 24V, a continuous drain current of 10A, and a maximum power dissipation of 240W.
The device features an advanced, self-aligned BCDMOS structure that combines the benefits of low on-state resistance and low gate charge for improved performance. In addition, its superior channel balance provides superior SOA and current sharing capability. Its low internal capacitance and fast switching speeds ensure efficient operation in high-frequency switching operations.
The device also has two inversion layers, an internal protection circuitry, and a high-voltage blocking structure which protects the device from overvoltage and thermal stress. This enables the device to easily handle the large voltage swings associated with the switching of the power electronics of today\'s high efficiency systems.
The working principle behind the SUM47N10-24L-E3 is that it operates like a switch that uses an electric current to control the flow of current through a power device. The power transistor is switched on or off depending on the electric current that flows through its gate. When the gate is switched on, the current flows easily through the device, enabling high power switching. When the gate is turned off, the current does not flow and the device remains off. This is known as the "on-off" principle.
The SUM47N10-24L-E3 device has been designed for use in high power applications such as server power supplies, DC-DC converters, automotive, industrial, LED lighting and a variety of consumer electronics. It is ideal for use in applications that require high efficiency, low noise, and fast switching. It also offers superior current-sharing capability for parallel operation of multiple FETs.
Overall, the SUM47N10-24L-E3 is an advanced, robust power MOSFET device specifically designed to meet the high power requirements of today\'s complex digital and power systems. It provides superior reliability, fast switching speeds and low on-resistance for maximum power delivery. With its superior SOA and current sharing capability, the device also increases overall system efficiency and reliability.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
SUM40N02-12P-E3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 20V 40A D2PAK... |
SUM40N10-30-E3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 100V 40A D2PA... |
SUM47N10-24L-E3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 100V 47A D2PA... |
SUM40010EL-GE3 | Vishay Silic... | 1.24 $ | 1000 | MOSFET N-CH 40V 120A D2PA... |
SUM45N25-58-E3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 250V 45A D2PA... |
SUM40N15-38-E3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 150V 40A D2PA... |
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...
MOSFET N-CH 55V 440A TO-268N-Channel 55V...
MOSFET N-CH 800V 14A TO-247N-Channel 800...
MOSFET N-CH 600V 23A TO-268(D3)N-Channel...
MOSFET N-CH 200V 72A TO-268N-Channel 200...
MOSFET N-CH 800V 9A TO-268N-Channel 800V...