SUM70040E-GE3

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The SUM70040E-GE3 has a variety of applications due to its integrated MOSFETs with integrated Schottky diodes. This device is very common in systems where power conversion and modulation are required, like automotive and consumer electronics. In addition, it is ideal for applications with high switching performance requirements, like SMPS or other high-speed applications, which need efficient and reliable solutions.

The SUM70040E-GE3 is a N-channel Enhancement Mode MOSFET which utilizes a dual MOSFET structure with integrated Schottky diodes. This feature reduces the need for external protection diodes, resulting in simpler designs and simplified board layout. The device has a very low “on resistance” of just 0.05 Ohms, making it ideal for a variety of applications in the lower power range. It also has a low “off leakage” of just 1 uA, making it suitable for battery-powered applications, where low power consumption is paramount.

The SUM70040E-GE3 is designed with a depletion load driving MOSFET, and a fully -depleted enhancement-mode load MOSFET. This allows a high power gain (Gm) and low output capacitance, while still maintaining a low on-resistance. This further enables efficient conversion from high to low voltages with a high frequency, within a relatively small area. In addition, the integrated Schottky diodes provide a rapid transient response, meaning that the device is able to quickly switch between high and low voltages to reduce power losses.

The SUM70040E-GE3 device is also designed with high frequency and transient stability features, including a well-controlled frequency characteristic and reduced EMI noise. Overall, the integrated circuits provide a high level of performance, with quick transient response, excellent switching efficiency and high operating temperature stability.

In terms of working principle, the N-channel Enhancement Mode MOSFET of the device utilizes a depletion load driving MOSFET and a fully-depleted enhancement-mode load MOSFET. When the gate is biased positively, electrons move towards the drain, resulting in an increase in drain-source current, which produces an amplifier gain. Moreover, due to the integrated Schottky diodes, the device is able to rapidly switch between high and low voltages, in order to reduce power losses.

The SUM70040E-GE3 device is typically used for power conversion and modulation, battery-powered applications, SMPS and other high-speed applications, where efficient and reliable solutions are needed. It provides the ability to quickly switch between high and low voltages, with a low on-resistance, low capacitance and low EMI noise. This makes it an ideal choice for a variety of applications.

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