Allicdata Part #: | SUM75N15-18P-E3-ND |
Manufacturer Part#: |
SUM75N15-18P-E3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 150V 75A D2PAK |
More Detail: | N-Channel 150V 75A (Tc) 3.12W (Ta), 312.5W (Tc) Su... |
DataSheet: | SUM75N15-18P-E3 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4.5V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | TO-263 (D2Pak) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 3.12W (Ta), 312.5W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 4180pF @ 75V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 100nC @ 10V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 18 mOhm @ 20A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 75A (Tc) |
Drain to Source Voltage (Vdss): | 150V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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.The SUM75N15-18P-E3 is a type of transistor, otherwise known as a field-effect transistor (FET) specifically from a subcategory of single MOSFETs. Its general application field and working principle are discussed further below.
These transistors are built on an element of silicon and can be used when a small-amplitude AC signal needs to be amplified. They also can be used when a small digital signal needs to be amplified. Generally, they are used as an electrical switch to turn on or off a certain voltage in the circuit, making them ideal for use in the audio frequency range or in CMOS digital circuits. In addition, they can be used as power transistors and general-purpose switches.
The FETs current operating mode is defined by the location and polarity of the gate voltage, its drain and source voltages, and the characteristics of the external circuit elements. FETs provide low distortion, low noise characteristics and a low voltage drive capability that make them particularly suitable for use in audio frequency applications.
The working principle of a SUM75N15-18P-E3 is the same as other FETs: an electric field is applied between the gate terminal and the drain-source terminals. The electric field controls the flow of current between the drain and source, allowing a signal to be amplified. This is doable because there is a voltage difference between the gate and the drain/source. When this voltage difference is high, current flows, and when it is low, current does not.
This type of FET is a single MOSFET. This means it has a single enhancement mode. In other words, it requires an external voltage to be applied to the gate terminal in order to turn it on. In an enhancement mode, the gate threshold voltage or VGS is the parameter that controls its current. The larger the VGS, the more current is able to flow between the source and drain.
The SUM75N15-18P-E3 is used for many applications, including audio amplifiers, voltage regulators, motor control, high-speed switching, and many more. High speed signals can be amplified with very little distortion with this MOSFET. This makes it a great choice for applications that require precision and low noise.
In summary, the SUM75N15-18P-E3 is a single MOSFET transistor. Its working principle is based on the application of an electric field to the gate terminal and drain/source terminals, which controls the flow of current between the two. It can be used in many different applications, such as audio amplifiers, voltage regulators, and motor control. This MOSFET is able to amplify high speed signals with very little distortion, making it ideal for applications where precision and low noise are paramount.
The specific data is subject to PDF, and the above content is for reference
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