SUM75N15-18P-E3 Allicdata Electronics
Allicdata Part #:

SUM75N15-18P-E3-ND

Manufacturer Part#:

SUM75N15-18P-E3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 150V 75A D2PAK
More Detail: N-Channel 150V 75A (Tc) 3.12W (Ta), 312.5W (Tc) Su...
DataSheet: SUM75N15-18P-E3 datasheetSUM75N15-18P-E3 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (D2Pak)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.12W (Ta), 312.5W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 4180pF @ 75V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
Series: TrenchFET®
Rds On (Max) @ Id, Vgs: 18 mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

.

The SUM75N15-18P-E3 is a type of transistor, otherwise known as a field-effect transistor (FET) specifically from a subcategory of single MOSFETs. Its general application field and working principle are discussed further below.

These transistors are built on an element of silicon and can be used when a small-amplitude AC signal needs to be amplified. They also can be used when a small digital signal needs to be amplified. Generally, they are used as an electrical switch to turn on or off a certain voltage in the circuit, making them ideal for use in the audio frequency range or in CMOS digital circuits. In addition, they can be used as power transistors and general-purpose switches.

The FETs current operating mode is defined by the location and polarity of the gate voltage, its drain and source voltages, and the characteristics of the external circuit elements. FETs provide low distortion, low noise characteristics and a low voltage drive capability that make them particularly suitable for use in audio frequency applications.

The working principle of a SUM75N15-18P-E3 is the same as other FETs: an electric field is applied between the gate terminal and the drain-source terminals. The electric field controls the flow of current between the drain and source, allowing a signal to be amplified. This is doable because there is a voltage difference between the gate and the drain/source. When this voltage difference is high, current flows, and when it is low, current does not.

This type of FET is a single MOSFET. This means it has a single enhancement mode. In other words, it requires an external voltage to be applied to the gate terminal in order to turn it on. In an enhancement mode, the gate threshold voltage or VGS is the parameter that controls its current. The larger the VGS, the more current is able to flow between the source and drain.

The SUM75N15-18P-E3 is used for many applications, including audio amplifiers, voltage regulators, motor control, high-speed switching, and many more. High speed signals can be amplified with very little distortion with this MOSFET. This makes it a great choice for applications that require precision and low noise.

In summary, the SUM75N15-18P-E3 is a single MOSFET transistor. Its working principle is based on the application of an electric field to the gate terminal and drain/source terminals, which controls the flow of current between the two. It can be used in many different applications, such as audio amplifiers, voltage regulators, and motor control. This MOSFET is able to amplify high speed signals with very little distortion, making it ideal for applications where precision and low noise are paramount.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "SUM7" Included word is 9
Part Number Manufacturer Price Quantity Description
SUM70060E-GE3 Vishay Silic... 0.85 $ 1000 MOSFET N-CH 100V 131A TO2...
SUM70040M-GE3 Vishay Silic... 1.32 $ 1000 MOSFET N-CH 100V 120A D2P...
SUM70N03-09CP-E3 Vishay Silic... -- 1000 MOSFET N-CH 30V 70A D2PAK...
SUM70N04-07L-E3 Vishay Silic... -- 1000 MOSFET N-CH 40V 70A D2PAK...
SUM75N15-18P-E3 Vishay Silic... -- 1000 MOSFET N-CH 150V 75A D2PA...
SUM75N06-09L-E3 Vishay Silic... -- 1000 MOSFET N-CH 60V 90A D2PAK...
SUM70101EL-GE3 Vishay Silic... -- 1000 MOSFET P-CH 100V 120A TO2...
SUM70040E-GE3 Vishay Silic... -- 1000 MOSFET N-CH 100V 120A D2P...
SUM70090E-GE3 Vishay Silic... -- 4800 MOSFET N-CH 100V 50A D2PK...
Latest Products
IRFL31N20D

MOSFET N-CH 200V 31A D2PAKN-Channel 200V...

IRFL31N20D Allicdata Electronics
IXTT440N055T2

MOSFET N-CH 55V 440A TO-268N-Channel 55V...

IXTT440N055T2 Allicdata Electronics
IXTH14N80

MOSFET N-CH 800V 14A TO-247N-Channel 800...

IXTH14N80 Allicdata Electronics
IXFT23N60Q

MOSFET N-CH 600V 23A TO-268(D3)N-Channel...

IXFT23N60Q Allicdata Electronics
IXTT72N20

MOSFET N-CH 200V 72A TO-268N-Channel 200...

IXTT72N20 Allicdata Electronics
IXFT9N80Q

MOSFET N-CH 800V 9A TO-268N-Channel 800V...

IXFT9N80Q Allicdata Electronics