SUM70101EL-GE3 Discrete Semiconductor Products

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The SUM70101EL-GE3 is an advanced n-channel power MOSFET device. It is specifically designed for high-speed switching applications, such as those found in low voltage DC/DC converter designs. Additionally, its low output charge, low on-resistance, fast switching speed, and low gate-charge make it an ideal choice for numerous other high-power switching applications.

The device’s structure is that of a n-channel enhancement mode MOSFET. This means that the device is capable of being “enhanced” or turned on by applying a positive voltage (VGS) to the gate of the device. This results in current flowing between the Source (S) and Drain (D) terminals. The “on” resistance of the device is measured at its lowest point with a positive gate voltage.

The SUM70101EL-GE3 has been designed to operate in medium- to high-temperature environments. Its maximum operating temperature is +175°C, and its maximum power dissipation is about 360mW. The device is rated for a drain-to-source blocking voltage of up to 100V, with the gate-to-source voltage limited to -20V. It is also capable of handling current levels up to 6A. Other important specifications of the SUM70101EL-GE3 device are: gate-to-source capacitance (Cgs), drain-to-source capacitance (Cds), and gate inductance (Lg).

Given its small size and impressive characteristics, the SUM70101EL-GE3 is an ideal choice for a wide variety of applications including: power management, motor control, automotive control, and industrial process control. Its low output charge and fast switching speed make it well suited for use in switch-mode power supplies and low voltage DC/DC converters. It can also be used in high frequency or high power switching applications. The device is also well suited for high-efficiency, high-temperature, and high-reliability applications.

The working principle of the SUM70101EL-GE3 is fairly simple. When a positive voltage is applied to the gate of the device, it is “enhanced” or turned on. This allows current to flow between the source and drain terminals. The current flow is determined by the gate-to-source voltage, on-resistance, and drain current. The device’s on-resistance can be further adjusted by applying additional gate-to-source voltage. The device is specifically designed to handle rapidly changing loads.

The SUM70101EL-GE3 is an impressive device for a variety of applications. Its fast switching speed, low output charge, and low on-resistance make it well-suited for switch-mode power supplies, low voltage DC/DC converters, motor control, automotive control, industrial process control, and other high-efficiency, high-temperature, and high-reliability applications.

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