Allicdata Part #: | SUM70N04-07L-E3-ND |
Manufacturer Part#: |
SUM70N04-07L-E3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 40V 70A D2PAK |
More Detail: | N-Channel 40V 70A (Tc) 3.75W (Ta), 100W (Tc) Surfa... |
DataSheet: | SUM70N04-07L-E3 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | TO-263 (D2Pak) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.75W (Ta), 100W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2800pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 75nC @ 10V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 7.4 mOhm @ 30A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 70A (Tc) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The SUM70N04-07L-E3 is a high voltage MOSFET that is commonly used in various applications. This type of MOSFET is of the single fet (Field-Effect Transistor) type, meaning that the application and operating principle of the device is based on the principle of controlling the flow of charge carriers, by creating an electric field across a thin insulating layer. In the case of the SUM70N04-07L-E3, that insulating layer is in the form of a gate oxide region, made of silicon dioxide.
The main application of the SUM70N04-07L-E3 is in power supplies, such as those used in computers and other electronic devices. The device is capable of switching large currents, and can provide excellent performance and reliability. The main advantages of using this MOSFET as a power switch are its low on-resistance, low gate charge, and its ability to drive large loads. It can also be used in many analog circuits, such as active filters.
The operating principle of the MOSFET relies on the fact that when a voltage is applied to the gate of the device, it creates an electric field over the gate oxide region, which in turn attracts the charge carriers, electrons or holes, in the channel region below the gate. This effectively reduces the overall resistance in the channel region, thus allowing current to flow.
The operation of the device relies on two major factors; the gate-to-source voltage, and the drain-to-source voltage. When a voltage is applied to the gate, it creates a reverse bias across the gate oxide region, which attracts the carriers from the source to the drain. This reduces the resistance in the channel, which in turn allows more current to flow. The amount of current that will flow is dependent on the size of the voltage applied to the gate as well as the size of the voltage applied to the drain.
The SUM70N04-07L-E3 is a versatile device, and is extremely useful for a variety of applications. It can be used to provide excellent performance and reliability for power supplies, active filters, and a variety of other applications. With its low on-resistance and its ability to drive large loads, it is an ideal choice for many applications.
The specific data is subject to PDF, and the above content is for reference
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