SUM70090E-GE3 Discrete Semiconductor Products |
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Allicdata Part #: | SUM70090E-GE3TR-ND |
Manufacturer Part#: |
SUM70090E-GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 100V 50A D2PK TO263 |
More Detail: | N-Channel 100V 50A (Tc) 125W (Tc) Surface Mount TO... |
DataSheet: | SUM70090E-GE3 Datasheet/PDF |
Quantity: | 4800 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | TO-263 (D2Pak) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 125W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1950pF @ 50V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 50nC @ 10V |
Series: | ThunderFET® |
Rds On (Max) @ Id, Vgs: | 8.9 mOhm @ 20A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 7.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 50A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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transistor technology has been around for over a century and is still being used in various applications across the world. In particular, Field-Effect Transistors (FETs) are a key component in many circuits due to their reduced size and low power consumption.The SUM70090E-GE3 is a low-voltage, low-power MOSFET designed for applications requiring high switching speed and low on-resistance. It is a type of FET that uses metal-oxide-semiconductor (MOS) technology, which has the advantage of being able to be used to create very small and low-power devices. This makes the SUM70090E-GE3 an ideal choice for applications ranging from consumer electronics to automotive systems.
For the SUM70090E-GE3, its Gate is linked to a single control voltage providing an easy to use single-gate implementation as opposed to the multi-gate FETs. Its power characteristics are best suited for low-voltage applications and high-current switching operation. The SUM70090E-GE3 is able to support circuits that require a fast switching times and low on-resistance from as low as 5V voltage. Its maximum drain-source voltage is 40V, with a 20V gate-source voltage rating.
The working principle of the SUM70090E-GE3 is based on the basic FET operation. FETs essentially control the flow of current between the Drain and Source regions by modulating the electric field at the gate. This modulation is achieved by changing the input voltage at the Gate terminal. The FET thereby acts like a voltage controlled switch. The gate voltage has an inverse relationship with the drain current, with higher voltage leading to lower drain current and vice versa.
The SUM70090E-GE3 has a drain-source on-resistance of 5.2 Ohms and a threshold voltage of 0.9V. It has a maximum permissible power dissipation of 543mW and a thermal resistance of 1.4 degrees C per Watt. The device also has capabilities for electrostatic discharge up to 2kV.
The application field of the SUM70090E-GE3 is quite broad and is generally used in low-voltage motor control, power supplies, lighting, and other general purpose electric circuits. It can also be used as a high-speed switch in automotive systems and other high-frequency devices such as those used in communication and medical equipment. Due to its low on-resistance, high switching speed and low gate threshold voltage, it is a suitable choice for power conservation and cost-efficiency in digital applications.
In conclusion, the SUM70090E-GE3 is a low-voltage, low-power, high-speed MOSFET that can be used in a wide variety of applications ranging from consumer electronic to automotive systems. Its small size and low power consumption make it an ideal choice for applications that require a fast switching time and low on-resistance, for example low-voltage motor control and power supplies.
The specific data is subject to PDF, and the above content is for reference
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