SUM75N06-09L-E3 Allicdata Electronics

SUM75N06-09L-E3 Discrete Semiconductor Products

Allicdata Part #:

SUM75N06-09L-E3CT-ND

Manufacturer Part#:

SUM75N06-09L-E3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 60V 90A D2PAK
More Detail: N-Channel 60V 90A (Tc) 3.75W (Ta), 125W (Tc) Surfa...
DataSheet: SUM75N06-09L-E3 datasheetSUM75N06-09L-E3 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 3V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (D2Pak)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3.75W (Ta), 125W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V
Series: TrenchFET®
Rds On (Max) @ Id, Vgs: 9.3 mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Cut Tape (CT) 
Description

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The SUM75N06-09L-E3 is a series of N-Channel Enhancement Mode MOSFETs that is available in the TO-220 and D-PAK packages. It is an advanced power MOSFET featuring low on-resistance and low dropout voltage characteristics, which makes it an ideal power supply component for a wide range of applications. This inverted device has a drain current of 0.75 Amps, drain-source voltage of 60 Volts, and a gate-source voltage of 3-5 Volts, making it highly suitable for use in applications such as memory microcontrollers, high voltage converters, power management and DC-DC switching regulators.

The SUM75N06-09L-E3 is designed for power management applications and features a low on-resistance for high current output. It also features a high switching speed, which means it can switch quickly, without causing any interference in the output signal. It is also designed with a low drain-source capacitance, enabling it to work at low voltage levels. In addition, it has a low input capacitance, making it resistant to noise.

The device is operated by a gate-source voltage and has a drain-source voltage. The drain-source voltage is the voltage that flows between the drain and the source when the device is turned on, while the gate-source voltage is the voltage that is applied to the gate of the device. When a positive voltage is applied to the gate of the device, it will turn on and allow the current to flow through between the drain and the source. Conversely, when a negative voltage is applied to the gate, it will turn off, preventing the current from flowing.

The SUM75N06-09L-E3 can be used in a wide range of applications, such as power converters, DC-DC switching regulators, memory microcontrollers and power management. It is highly suitable for applications that require high current output, fast switching and low noise. It is also useful for applications where a low on-resistance and low dropout voltage are required.

The device has many advantages over other MOSFETs, including its high switching speed, low on-resistance, low input capacitance and low drain-source voltage. Furthermore, it is highly suitable for use in applications that require high voltage converters, power management and DC-DC switching regulators. The SUM75N06-09L-E3 is an ideal choice for a wide range of power management solutions.

The specific data is subject to PDF, and the above content is for reference

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