SUM75N06-09L-E3 Discrete Semiconductor Products |
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Allicdata Part #: | SUM75N06-09L-E3CT-ND |
Manufacturer Part#: |
SUM75N06-09L-E3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 60V 90A D2PAK |
More Detail: | N-Channel 60V 90A (Tc) 3.75W (Ta), 125W (Tc) Surfa... |
DataSheet: | SUM75N06-09L-E3 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | TO-263 (D2Pak) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.75W (Ta), 125W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2400pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 75nC @ 10V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 9.3 mOhm @ 30A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 90A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Cut Tape (CT) |
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The SUM75N06-09L-E3 is a series of N-Channel Enhancement Mode MOSFETs that is available in the TO-220 and D-PAK packages. It is an advanced power MOSFET featuring low on-resistance and low dropout voltage characteristics, which makes it an ideal power supply component for a wide range of applications. This inverted device has a drain current of 0.75 Amps, drain-source voltage of 60 Volts, and a gate-source voltage of 3-5 Volts, making it highly suitable for use in applications such as memory microcontrollers, high voltage converters, power management and DC-DC switching regulators.
The SUM75N06-09L-E3 is designed for power management applications and features a low on-resistance for high current output. It also features a high switching speed, which means it can switch quickly, without causing any interference in the output signal. It is also designed with a low drain-source capacitance, enabling it to work at low voltage levels. In addition, it has a low input capacitance, making it resistant to noise.
The device is operated by a gate-source voltage and has a drain-source voltage. The drain-source voltage is the voltage that flows between the drain and the source when the device is turned on, while the gate-source voltage is the voltage that is applied to the gate of the device. When a positive voltage is applied to the gate of the device, it will turn on and allow the current to flow through between the drain and the source. Conversely, when a negative voltage is applied to the gate, it will turn off, preventing the current from flowing.
The SUM75N06-09L-E3 can be used in a wide range of applications, such as power converters, DC-DC switching regulators, memory microcontrollers and power management. It is highly suitable for applications that require high current output, fast switching and low noise. It is also useful for applications where a low on-resistance and low dropout voltage are required.
The device has many advantages over other MOSFETs, including its high switching speed, low on-resistance, low input capacitance and low drain-source voltage. Furthermore, it is highly suitable for use in applications that require high voltage converters, power management and DC-DC switching regulators. The SUM75N06-09L-E3 is an ideal choice for a wide range of power management solutions.
The specific data is subject to PDF, and the above content is for reference
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