Allicdata Part #: | SUP70040E-GE3-ND |
Manufacturer Part#: |
SUP70040E-GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 100V 120A TO220AB |
More Detail: | N-Channel 100V 120A (Tc) 375W (Tc) Through Hole TO... |
DataSheet: | SUP70040E-GE3 Datasheet/PDF |
Quantity: | 131 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 375W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 5100pF @ 50V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 120nC @ 10V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 4 mOhm @ 20A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 7.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 120A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Bulk |
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The SUP70040E-GE3 is an advanced single N-channel enhancement mode MOSFET (Metal Oxide Semiconductor Field Effect Transistor) from the Toshiba Corporation. It is primarily used in power management applications and other high-performance, precision circuits. The MOSFET has a low operating temperature and is suitable for high-speed switching operations.
The SUP70040E-GE3 has a maximum drain current rating of 22 A and a maximum drain-source voltage rating of 10 V. This is a high voltage device with a low on-resistance for improved efficiency. The MOSFET features a fast switching speed and an on-resistance of only 0.012 Ω when operated at 25°C.
The SUP70040E-GE3 has a wide range of applications, including high-frequency switching operations, power supply circuits, DC-DC converters, motor drivers, and solenoid drivers. It can be used in power amplifier switching applications, such as class-D amplifiers, in order to improve efficiency and reduce switching losses. The SUP70040E-GE3 can also be used as a load switch in battery management systems.
The SUP70040E-GE3 is a single-die MOSFET that contains two primary components: a gate and a drain. The gate is the control element of the MOSFET, which is responsible for controlling the flow of current from the source to the drain. The drain is the output terminal, which collects the current from the source and transfers it to the load. The source is the input to the MOSFET and is responsible for providing the bias voltage to the gate.
The working principle of the SUP70040E-GE3 involves the application of a voltage to the gate of the MOSFET, which then causes the conducting channel to form between the source and drain. This gives rise to a current flow from the source to the drain, controlled by the gate voltage. As the gate voltage is increased, the drain current increases, allowing the device to act as an electronic switch.
The SUP70040E-GE3 is a versatile MOSFET that is used in a range of applications due to its low operating temperature, high speed switching capabilities, and low on-resistance. It is an ideal choice for applications that require high performance and precision, such as power management, DC-DC converters, motor drivers, and other high-frequency switching operations.
The specific data is subject to PDF, and the above content is for reference
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