SUP70060E-GE3

SUP70060E-GE3 transistors are a single type of Field Effect Transistor (FETs), or MOSFETs, which are specialized semiconductor devices that control current or voltage in electronic circuits. FETs are composed of two or more layers of semiconductor material in which one layer consists of a source and the other contains a drain. This transistor is a N-Channel enhancement-mode MOSFET, meaning that it is composed of a source, gate, and drain. It is characterized by high input impedance and low output impedance, which allows it to pass both AC and DC signals without any amplification or loading.

The SUP70060E-GE3 is designed for unidirectional current flow from source to drain and has a maximum drain-source voltage of 600V. It can handle peak currents of up to 1.4A and can be driven by voltages from 4V to 20V. It has a high on-state resistance, up to 125 mΩ, and a very low input capacitance of 6.1 pF. It is designed to work with a wide range of devices, such as amplifiers and Clipper circuits, and is capable of operating at high frequencies.

The working principle of the SUP70060E-GE3 is based on the interaction between the electric field and the conducting carriers in the semiconductor material. When the gate voltage is applied, a conductive channel is created between the source and drain. This allows current to flow and the transistor acts like an electronic switch. As the gate voltage is increased, the open channel between source and drain increases, allowing more current to flow through the transistor.

The SUP70060E-GE3 can be used in a wide range of applications including audio amplifiers, gate drivers, level shifters, power switching, and motor control. It can also be used for signal conditioning and signal processing applications, including mixing and filtering. The low on-state resistance of the device makes it ideal for switching applications such as power MOSFETs, where low losses are important. It is a great choice for low power and medium power consumer electronics.

The SUP70060E-GE3 is a versatile and cost-effective MOSFET that provides excellent performance in a wide range of applications. It has a low input capacitance and high on-state resistance that make it ideal for applications such as signal conditioning and signal processing. Its compatibility with a wide range of devices makes it suitable for many consumer electronics, and its small size makes it suitable for space-constrained designs.