SUP70101EL-GE3

Gate Charge (Qg) (Max) @ Vgs:	190nC @ 10V
Package / Case:	TO-220-3
Supplier Device Package:	TO-220AB
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	375W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	7000pF @ 50V
Vgs (Max):	±20V
Series:	TrenchFET®
Vgs(th) (Max) @ Id:	2.5V @ 250µA
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	120A (Tc)
Drain to Source Voltage (Vdss):	100V
Technology:	MOSFET (Metal Oxide)
FET Type:	P-Channel
Part Status:	Active
Packaging:	Tube

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Introduction

SUP70101EL-GE3 is a general-purpose enhancement MOSFET, which can be utilized in a wide range of applications. It provides a low forward gate-source threshold and low Drain-Source on resistance for high efficiency operation. The device features superior performance optimized for low gate and drain-source capacitance and gate charge, which helps provide high switching speeds. Additionally, it uses an industry-standard small package that enables flexibility through high density mounting techniques. The power MOSFET is also rated for a -40°C to 150°C junction temperature operating range and comes with a VisoPak surface mount package for easy mounting and maintenance.

Application Fields

SUP70101EL-GE3 is a highly versatile power MOSFET, and it can be employed in a wide variety of applications that include:

• Automotive electronics – As a power MOSFET, it can be used in a variety of automotive applications where reliable switching is required, including motor control, power management, motor speed control, and power switch applications.
• Industrial automation – SUP70101EL-GE3 can be used in a range of power supplies and automated systems for industrial applications, such as welding, factory automation, and other process automation systems.
• Power supplies – SUP70101EL-GE3 can be used in power converter designs, providing efficient power control in a broad range of applications.
• Household appliances – SUP70101EL-GE3 can be used in a variety of household devices to provide reliable switching and power control.

Working Principle

The SUP70101EL-GE3 MOSFET is an enhancement device, which enables it to be used as either a switch or an amplifier. This MOSFET utilizes a conduction channel known as the gate-source voltage (VGS), which is maintained between the gate and source terminals of the device. VGS defines the maximum level of current that the source can overpower the gate. When the VGS is lower than the given threshold voltage, the device conducts current in a linear fashion. However, when the VGS surpasses the given threshold voltage, the device enters the saturation region and the current flow is effectively shorted. The drain-source voltage (VDS) defines the maximum level of current that the drain can overpower the source. When the VDS is lower than the given breakdown voltage, the device acts as an open switch. However, when the VDS is greater than the breakdown voltage, the device enters its linear region and the current flow is effectively shorted. In summary, the SUP70101EL-GE3 MOSFET utilizes the gate-source voltage (VGS) and drain-source voltage (VDS) to provide reliable switching and amplification current control. The device also features a low forward gate-source threshold and low drain-source on resistance, enabling efficient and high-frequency switching operations.

Conclusion

SUP70101EL-GE3 is a versatile power MOSFET that can be utilized in a wide range of applications. It provides a low-forward gate-source threshold and low drain-source on resistance for efficient operation. Additionally, it utilizes an industry-standard small package that enables flexible mounting techniques. The working principle of the MOSFET is such that it utilizes the gate-source voltage (VGS) and drain-source voltage (VDS) for reliable switching and amplification current control. The device is a reliable choice for automotive, industrial, and household applications.

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