SUP70090E-GE3 Allicdata Electronics
Allicdata Part #:

SUP70090E-GE3-ND

Manufacturer Part#:

SUP70090E-GE3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 100V 50A TO-220
More Detail: N-Channel 100V 50A (Tc) 125W (Tc) Through Hole TO-...
DataSheet: SUP70090E-GE3 datasheetSUP70090E-GE3 Datasheet/PDF
Quantity: 427
Stock 427Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 125W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1950pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
Series: ThunderFET®
Rds On (Max) @ Id, Vgs: 8.9 mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Bulk 
Description

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The SUP70090E-GE3 is an N-channel enhancement mode MOSFET, designed for use in switch mode power supplies, DC-DC converters, and LED lighting control applications. As such, it is an excellent choice for applications requiring low on-resistance, low input capacitance, low gate charge, and/or low power dissipation.

The SUP70090E-GE3 has several noteworthy features. First, it has an remarkably low on-resistance rating, boasting 35mΩ at 4.5V. Secondly, it has an extremely low input capacitance rating of 8.5pF. Finally, it has a low gate charge rating of 11nC.

The SUP70090E-GE3 is a single N-channel MOSFET, meaning that it is composed of one N-type MOSFET. An N-type MOSFET is a type of transistor that utilizes electron-flow rather than hole flow to carry an electrical current. When a voltage is applied to the Source and Drain of the transistor, an inversion layer is formed in the channel of the MOSFET, which allows current to flow through the channel. This process is known as enhancement mode and is the basis of all MOSFETs.

The SUP70090E-GE3 can be used in a variety of applications due to its low on-resistance, low input capacitance, low gate charge, and low power dissipation. It is commonly used in switch mode power supplies, DC-DC converters, and LED lighting control applications. In such applications, it is an excellent choice for controlling current in low voltage, low power circuits.

The working principle of the SUP70090E-GE3 is simple. When a voltage is applied to its source and drain, a depletion layer forms in the MOSFET’s channel. This depletion layer acts as a gate, controlling the amount of current that can flow through the transistor. By manipulating the voltage to the gate, the current through the MOSFET can be increased or decreased as desired. The SUP70090E-GE3’s low input capacitance ensures that the gate voltage remains low, allowing the MOSFET to operate at low power levels.

In summary, the SUP70090E-GE3 is an excellent choice for low voltage, low power circuits. Its low on-resistance, low input capacitance, low gate charge, and low power dissipation make it ideal for switch mode power supplies, DC-DC converters, and LED lighting control applications. The working principle behind the SUP70090E-GE3 is simply a matter of controlling the voltage to the gate, which will then regulate the amount of current that can flow through the MOSFET.

The specific data is subject to PDF, and the above content is for reference

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