Allicdata Part #: | SUP70090E-GE3-ND |
Manufacturer Part#: |
SUP70090E-GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 100V 50A TO-220 |
More Detail: | N-Channel 100V 50A (Tc) 125W (Tc) Through Hole TO-... |
DataSheet: | SUP70090E-GE3 Datasheet/PDF |
Quantity: | 427 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 125W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1950pF @ 50V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 50nC @ 10V |
Series: | ThunderFET® |
Rds On (Max) @ Id, Vgs: | 8.9 mOhm @ 20A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 7.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 50A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Bulk |
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The SUP70090E-GE3 is an N-channel enhancement mode MOSFET, designed for use in switch mode power supplies, DC-DC converters, and LED lighting control applications. As such, it is an excellent choice for applications requiring low on-resistance, low input capacitance, low gate charge, and/or low power dissipation.
The SUP70090E-GE3 has several noteworthy features. First, it has an remarkably low on-resistance rating, boasting 35mΩ at 4.5V. Secondly, it has an extremely low input capacitance rating of 8.5pF. Finally, it has a low gate charge rating of 11nC.
The SUP70090E-GE3 is a single N-channel MOSFET, meaning that it is composed of one N-type MOSFET. An N-type MOSFET is a type of transistor that utilizes electron-flow rather than hole flow to carry an electrical current. When a voltage is applied to the Source and Drain of the transistor, an inversion layer is formed in the channel of the MOSFET, which allows current to flow through the channel. This process is known as enhancement mode and is the basis of all MOSFETs.
The SUP70090E-GE3 can be used in a variety of applications due to its low on-resistance, low input capacitance, low gate charge, and low power dissipation. It is commonly used in switch mode power supplies, DC-DC converters, and LED lighting control applications. In such applications, it is an excellent choice for controlling current in low voltage, low power circuits.
The working principle of the SUP70090E-GE3 is simple. When a voltage is applied to its source and drain, a depletion layer forms in the MOSFET’s channel. This depletion layer acts as a gate, controlling the amount of current that can flow through the transistor. By manipulating the voltage to the gate, the current through the MOSFET can be increased or decreased as desired. The SUP70090E-GE3’s low input capacitance ensures that the gate voltage remains low, allowing the MOSFET to operate at low power levels.
In summary, the SUP70090E-GE3 is an excellent choice for low voltage, low power circuits. Its low on-resistance, low input capacitance, low gate charge, and low power dissipation make it ideal for switch mode power supplies, DC-DC converters, and LED lighting control applications. The working principle behind the SUP70090E-GE3 is simply a matter of controlling the voltage to the gate, which will then regulate the amount of current that can flow through the MOSFET.
The specific data is subject to PDF, and the above content is for reference
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