SUP75N03-04-E3

The SUP75N03-04-E3 is a high-performance N-channel Silicon MOSFET, optimised for applications requiring low power loss with very low gate-source threshold voltage. It offers enhanced output capability and enhanced frequency response in older applications. This particular MOSFET is a single device, and comes in a package with a wattage rating up to 50W. It is also available in a TO-252 package.

Application fields of this MOSFET include switching, logic, loss reduction, and low voltage operation. It has been developed with significantly lower RDS(on) and a low gate charge, making it ideal for low power applications. It has a low turn-on voltage and a low gate-source capacitance, making it suitable for high frequency switching. This also reduces ringing and makes it an excellent fit for applications such as high speed logic gates.

The working principle of the MOSFET is based on controlling current flow in the channel. When the MOSFET is fully OFF, the electrical field in the channel prevents current from flowing into the drain. When the MOSFET is fully ON, the electrical field in the channel causes current from the source to flow easily into the drain. This can be modulated by applying a bias gate-to-source voltage, to control the current flow from “ON” to “OFF”.

The source terminal of the MOSFET is grounded, and current is enabled through the gate to flow from the source to the drain. This action causes a small positive potential at the gate electrode, which is called the threshold voltage. This voltage must be exceeded in order for the MOSFET to turn on.

The SUP75N03-04-E3 is typically used as a logic switch, in applications where low power loss is a priority. It is also suitable for use in devices such as power amplifiers and power supplies, where high-speed switching performance is needed. It is also popular in high-resolution switching circuits, such as in frequency synthesizers, sonar, and cellular phones.

The SUP75N03-04-E3 has a high current carrying capacity, low input capacitance, low gate-source threshold voltage, low drain-source on-resistance, and a low turn-on voltage. This makes it an ideal choice for applications requiring high-frequency performance and low power dissipation.