SUP75P05-08-E3

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The SUP75P05-08-E3 is an n-channel enhancement-mode MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) developed by Vishay Siliconix. It is comprised of vertical DMOS (Double-diffused Metal Oxide Semiconductor) technology and is ideal for high speed switching and applications requiring low on-resistance.

Overview

The SUP75P05-08-E3 is a through-hole device with a package outline of SOT-223 (Small Outline Transistor-223). It features extremely low R_DS(ON) at 1.68 ohm experienced at 10V drain voltage. This is combined with fast switching speed and low gate charge, providing improved system efficiency. The device also provides ESD protection and a back gate Source to GND clamp for increased protection.

Applications

Due to its superior characteristics and high reliability, the SUP75P05-08-E3 is an ideal choice of enhancement mode MOSFET in a wide range of applications. It is mainly used in motor control applications such as DC motor drives, brushless DC motor drives, and stepper motor drives. It can also be used in consumer electronics such as cellular phones, notebooks, MP3 players, and consumer appliances. It’s high efficiency, low R_DS(ON), and fast switching speed also make the SUP75P05-08-E3 a suitable choice for telecom and datacom power supplies.

Working Principle

Enhancement mode MOSFETs function using the principle of “current control”. These devices include a voltage-controlled insulated gate which is separated from the underlying Drain and Source regions using a thin layer of an insulator. Applying a suitable voltage to the gate causes the FET to enter its enhancement mode state and allows currents to flow from the source to the drain. This action results in a channel forming between the source and drain. When reverse bias is applied to the gate, the electrical field across the gate is reversed, and the channel between the source and the drain is closed, resulting in the device being turned OFF.

The SUP75P05-08-E3 is a very reliable device and is highly effective for controlling currents in circuits where a small gate-to-source capacitance is acceptable. It also provides superior levels of linearity as well as excellent thermal management, which makes it suitable for use in all of its applications.

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