TN0104N3-G-P003

Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	40V
Current - Continuous Drain (Id) @ 25°C:	450mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):	3V, 10V
Rds On (Max) @ Id, Vgs:	1.8 Ohm @ 1A, 10V
Vgs(th) (Max) @ Id:	1.6V @ 500µA
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	70pF @ 20V
FET Feature:	--
Power Dissipation (Max):	1W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	TO-92-3
Package / Case:	TO-226-3, TO-92-3 (TO-226AA)
Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
FET Type:	N-Channel

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TN0104N3-G-P003 is a low voltage enhancement N-channel MOSFET which has the capability of driving up to 3A of load current. It is well suited for applications in consumer electronics and portable devices. This paper will discuss the application field and working principle of TN0104N3-G-P003. Application FieldTN0104N3-G-P003 is a widely used low voltage enhancement N-channel MOSFET. It is an ideal component for consumer electronics applications such as DC brushed motors, relays and power supplies. Due to its low operating voltage and wide RDS(ON) range (1.0~1.5 ohms), TN0104N3-G-P003 is also well suited for portable device applications that require low total power consumption. It is capable of controlling up to 3A of load current, making it ideal for low power motors and relays.The low on resistance of TN0104N3-G-P003 (1.0~1.5 ohms) also makes it suitable for inverter applications. It can be used to provide an efficient path to ground, resulting in low power dissipation and improved overall efficiency.Working PrincipleThe basic operation of the TN0104N3-G-P003 is based on the principles of a MOSFET. The FET (Field-Effect Transistor) has an insulated gate that allows the flow of current between its drain and source. It is designed to control the flow of current through the channel between its drain and source terminals, when a gate voltage is applied.When a voltage is applied to the gate region, electrons are attracted to the conductor. This heightens the conduction channel between the drain and source terminals so that the current can flow between them. This is the working principle of the TN0104N3-G-P003.The operating voltage of the TN0104N3-G-P003 is only 2V, making it an ideal option for applications that require low power and high efficiency. In addition, it features an improved level of noise immunity, making it well suited for applications in noisy environments.ConclusionIn conclusion, the TN0104N3-G-P003 is a widely used low voltage enhancement N-channel MOSFET which is ideal for consumer electronics and portable device applications. Its low operating voltage and wide RDS(ON) range (1.0~1.5 ohms) make it an ideal choice for applications that require low total power consumption. The working principle of TN0104N3-G-P003 is based on the principles of a MOSFET, allowing current to flow between the drain and source terminals when a gate voltage is applied.

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