TN0106N3-G Allicdata Electronics
Allicdata Part #:

TN0106N3-G-ND

Manufacturer Part#:

TN0106N3-G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Microchip Technology
Short Description: MOSFET N-CH 60V 350MA TO92-3
More Detail: N-Channel 60V 350mA (Tj) 1W (Tc) Through Hole TO-9...
DataSheet: TN0106N3-G datasheetTN0106N3-G Datasheet/PDF
Quantity: 1657
Stock 1657Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 2V @ 500µA
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 25V
Vgs (Max): ±20V
Series: --
Rds On (Max) @ Id, Vgs: 3 Ohm @ 500mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 350mA (Tj)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Bulk 
Description

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TN0106N3-G is a P-channel enhancement mode Field Effect Transistor (FET). It is a single type transistor and is produced in a small and compact TO-236AB (SOT-23) package. It has two leads, namely Source and Drain and the Gate which completes a three-terminal device. It is mainly used for low- and medium-power applications such as audio amplifiers, motor drivers, alarms, or digital circuits and can also operates up to 30V with a max ID of 20mA and RDS(on) of 1.45Ω max.

Working Principle

The working principle of TN0106N3-G is based on the fact that the drain current through the FET changes with the Gate voltage. FETs operate by the principle of majority carriers and also known as voltage controlled and unipolar transistors. It has three terminals - drain, source and gate, in which source and drain are the main current carrying terminals and gate controls the current flow.

Applying a negative voltage between gate and source makes the depletion region increases, which restricts the current flow. Applying a positive voltage between gate and source makes the depletion region decreases, which increases the current flow. This is known as the Enhancement Mode of operation. As FETs are voltage controlled, the gate voltage can be adjusted to control the current flow through the device.

Application Field

TN0106N3-G is mainly used for small and medium-power applications because of its small size and low cost. It can be used in applications such as audio amplifiers, inverters, motor drivers, alarms, digital circuits, and other small power circuits. It is also suitable for battery powered applications as it has low power consumption.

It is especially useful for the high-impedance inputs of Audio Amplifiers such as pre-amplifier, equalizers and power amplifiers. This transistors are also used in switching circuits as they switch very fast and use very low power. It is also used in logic as its switching time is very low and can switch high-currents. TN0106N3-G is suitable for low-power logic gates, flip-flops, comparators, counters and other logic applications.

TN0106N3-G has a wide range of applications, owing to the wide range ofproperties such as low cost, good performance, small size and low power consumption. This transistors is a very common device used in low and medium power applications in industry.

The specific data is subject to PDF, and the above content is for reference

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