TN0106N3-G-P013

The TN0106N3-G-P013 is a single n-channel logic level enhancement mode vertical DMOS Field Effect Transistor manufactured by STMicroelectronics. This transistor can provide loads of up to 10A and a voltage supply of up to 40V while still providing extremely low drain-source resistance and excellent thermal performance—which is why it\'s used in many automotive and industrial applications. It has a variety of features and benefits that make it highly attractive to those who need to provide power in a limited space.

The TN0106N3-G-P013 is designed to switch quickly and accurately and can be used in a wide range of applications. It is considered one of the most robust FETs on the market, as it can withstand temperatures as high as 150°C without sacrificing performance. It is also highly efficient when switching high-voltage and high-current applications, making it an ideal choice in automotive and industrial applications.

The TN0106N3-G-P013 is a vertical DMOS FET, which means it uses a vertical channel between the source and the drain. This enables the transistor to have a much lower input capacitance compared to standard MOSFETs. It also has a very fast switching speed and a very low leakage current that helps reduce power consumption.

The TN0106N3-G-P013 is typically used in applications such as DC/DC converters, boost converters, flyback converters, laser drivers, high power LEDs, radio-frequency amplifiers, peak current mode converters, motor drives, capacitive sensing, and many others. It is also used in automotive and industrial applications, such as DC-DC converters, voltage regulators, engine control, and ignition circuits.

The TN0106N3-G-P013 is a logic-level enhancement mode MOSFET, which means that it turns on or off depending on the logic level of the input signal. When the input signal of the MOSFET is at a high logic level, the transistor is in the on state, and when the input signal is at a low logic level, the transistor is in the off state. This allows for very accurate and fast operation, as well as high efficiency.

The TN0106N3-G-P013 features a unique monolithically integrated structure, which provides improved EMI immunity and excellent thermal performance. It also has low switching losses due to its low input capacitance, which ensures good efficiency and power savings. The device also has a low on-resistance, which means it can handle higher current loads than other FETs.

In conclusion, the TN0106N3-G-P013 is an ideal choice for many applications, as it has excellent thermal performance, a low input capacitance, and a low on-resistance, making it a highly efficient and robust FET. Its logic-level enhancement mode, monolithic integration structure, and high switching speed make it an excellent choice for high-power, high-current applications in the automotive and industrial sectors.