| Allicdata Part #: | TN0110N3-G-ND |
| Manufacturer Part#: |
TN0110N3-G |
| Price: | $ 0.62 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Microchip Technology |
| Short Description: | MOSFET N-CH 100V 350MA TO92-3 |
| More Detail: | N-Channel 100V 350mA (Tj) 1W (Tc) Through Hole TO-... |
| DataSheet: |  TN0110N3-G Datasheet/PDF |
| Quantity: | 999 |
| 1 +: | $ 0.56700 |
| 25 +: | $ 0.47376 |
| 100 +: | $ 0.42827 |
Specifications
| Vgs(th) (Max) @ Id: | 2V @ 500µA |
| Package / Case: | TO-226-3, TO-92-3 (TO-226AA) |
| Supplier Device Package: | TO-92-3 |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 1W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 60pF @ 25V |
| Vgs (Max): | ±20V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 3 Ohm @ 500mA, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 350mA (Tj) |
| Drain to Source Voltage (Vdss): | 100V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Bulk |
Description
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The TN0110N3-G is one of the most reliable and high performing switching power devices used in a variety of electronic devices today. It is a non-inverting N-channel enhancement mode power field-effect transistor (FET). It is commonly used in a variety of applications including audio amplifiers, alarm systems, and digital signal processing. This article will discuss the application field and working principle of the TN0110N3-G.The TN0110N3-G is a single N-channel enhancement mode MOSFET with a drain-source breakdown voltage of 15 Volts, Gate-source breakdown voltage of 16 Volts, and on-state resistance of 0.017 Ohms. It is designed to reduce switching losses and increase power efficiency while providing better thermal performance. This makes it ideal for a variety of power switching applications such as switch mode power supplies, motor speed control, and switching power regulators. The low on-state resistance, high power efficiency, and low switching loss makes the TN0110N3-G an ideal choice for a variety of power switching applications.In addition to its switching capabilities, the TN0110N3-G also has a number of other uses. It can be used as an amplifier in audio applications and can also be used to provide a low on-resistance current path for driving logic gates. It can also be used in LED lighting applications, as well as for low power supplies and for voltage regulation in some applications.The TN0110N3-G operates by allowing the current to pass through the Gate, Source, and Drain of the transistor when the Gate voltage is greater than the Source voltage. When the Gate voltage is not above the Source voltage, the device is in the off state and the current cannot flow. The on-state resistance of the TN0110N3-G is determined by the Gate voltage, and the on-state voltage is determined by the Source voltage. The higher the Gate voltage, the lower the on-state resistance.The working principle of the TN0110N3-G can be summarized as follows: When the Gate voltage is higher than the Source voltage, the FET is in the on state and allows the current to pass through it. When the Gate voltage is lower than the Source voltage, the FET is in the off state and does not allow the current to flow. The on-state resistance of the FET is determined by the Gate voltage, and the on-state voltage is determined by the Source voltage.In summary, the TN0110N3-G is an ideal device for a variety of power switching applications, such as switch mode power supplies, motor speed control, and switching power regulators. It has a low on-state resistance, high power efficiency, and low switching loss, making it the perfect choice for such applications. It is also commonly used in audio amplifiers, alarm systems, and digital signal processing. The working principle of the TN0110N3-G is based on allowing current to flow through the Gate, Source, and Drain of the transistor when the Gate voltage is greater than the Source voltage.
The specific data is subject to PDF, and the above content is for reference
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