TN0104N3-G

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The TN0104N3-G is a Toshiba N-Channel power MOSFET that is ideal for use in a variety of switching and power amplifier applications. This MOSFET is a medium-voltage power amplifier that uses an enhancement-mode structure. This structure allows for higher power dissipation than is possible with a depletion type MOSFET.

The TN0104N3-G is a combination of high-performance silicon and advanced processing technology that provides superior reliability, power density, and low on-state resistance. This MOSFET also features a very low input capacitance and output capacitance. It has a wide drain-source breakdown voltage ratings of up to 100V, which allows it to be employed in high-efficiency power supply circuits.

The TN0104N3-G is a single FET with a P-Channel MOSFET in the drain-source circuit. It is capable of controlling a wide range of voltage and current levels. It is based on the enhancement-mode process and is suitable for use in digital, analog and RF circuits. It has a source-drain access resistance of just 25 mΩ, a gate capacitance of 1.2 pF, an on-resistance of 1.2 kΩ, and a breakdown voltage of 40 V drain-to-source.

The TN0104N3-G has a variety of applications, such as high-efficiency power supplies, power amplifier applications, high-speed switching circuits, DC motors, continuous current and power applications, and memory circuits, among others. It can also be used in high-denisty, low cost portable applications, enabling manufacturers to reduce cost while maintaining efficient design.

The TN0104N3-G’s working principle is based on a voltage-controlled MOSFET, which has a gate electrode that is insulated from the channel and is normally held at a low potential by an external bias. When a suitable gate voltage is applied, electrons are injected from the source into the channel, allowing current to flow from source to drain. The amount of current that can flow through the device is determined by the gate voltage, which is proportional to the amount of electrons injected into the channel.

The TN0104N3-G is a reliable, high-performance MOSFET that is suitable for applications requiring low power dissipation, high efficiency, and low on-state resistance. It is suitable for use in digital, analog, and RF circuits and its advantage includes its very low input capacitance, output capacitance, and wide drain-source breakdown voltage.

The specific data is subject to PDF, and the above content is for reference