TN0104N8-G Discrete Semiconductor Products

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The TN0104N8-G is a single N-Channel Enhancement Mode Field Effect Transistor (FET). It can be used in a variety of applications from high user current switches to high frequency amplifiers, while offering very low on-state resistance. This article will explain the TN0104N8-G application field and working principle.

Application
TN0104N8-G is mainly applied in load switch applications such as lighting or motor control. It can also be used as an audio amplifier, balancing amplifier output impedance, and as a preamplifier. This FET is perfect for power over Ethernet (PoE) applications, as it can sustain high loads when switching on-off. The internal anti-surge protection keeps the device from over-voltage, making it a great choice for low voltage structures.

Working Principle
The working principle of the TN0104N8-G is based on the metal-oxide-semiconductor field effect transistor (MOSFET) structure. This type of structure consists of three regions inside the FET, including the source, drain and gate regions. The source consists of an N-type region, which is connected to the drain of the device. The gate consists of an Insulated Gate field effect transistor (IGFET) that serves as the control element. The drain is P-type and connected to a power supply. This structure allows the device to be controlled by applying a voltage to the gate, which in turn opens or closes the device.

When no voltage is applied to the gate, the device remains turned off, which is called the Off state. When a voltage is applied, the gate conducts electrons from the source to the drain, turning the device on and thus allowing the current to flow from the drain to the source. This is called the On state. The on-state resistance of the TN0104N8-G is extremely low, making it an ideal choice for load switch applications.

TN0104N8-G offers additional characteristics that make it suitable for various applications. It has a low gate threshold voltage and a low on-state resistance. It is also able to sustain higher currents than standard FETs, which makes it ideal for power switching applications. Moreover, it is a low voltage component, meaning that it can be used in low voltage structures such as PoE.

Overall, the TN0104N8-G is a great choice for various applications such as power switching, audio amplifiers and PoE systems. It offers low on-state resistance, high current sustainment, low gate threshold voltage, and an internal anti-surge protection. All of these features make it ideal for a variety of applications.

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