TP2502N8-G Discrete Semiconductor Products |
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Allicdata Part #: | TP2502N8-GTR-ND |
Manufacturer Part#: |
TP2502N8-G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microchip Technology |
Short Description: | MOSFET P-CH 20V 0.63A SOT89-3 |
More Detail: | P-Channel 20V 630mA (Tj) 1.6W (Ta) Surface Mount T... |
DataSheet: | TP2502N8-G Datasheet/PDF |
Quantity: | 1000 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 630mA (Tj) |
Drive Voltage (Max Rds On, Min Rds On): | 5V, 10V |
Rds On (Max) @ Id, Vgs: | 2 Ohm @ 1A, 10V |
Vgs(th) (Max) @ Id: | 2.4V @ 1mA |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 125pF @ 20V |
FET Feature: | -- |
Power Dissipation (Max): | 1.6W (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | TO-243AA (SOT-89) |
Package / Case: | TO-243AA |
Series: | -- |
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The TP2502N8-G is a single circuit MOSFET commonly used in a wide range of applications. This FET is ideal for providing reliable switching and amplification in a number of markets, ranging from consumer electronics, automotive, military, and industrial applications. In this article, we are going to talk about the application field and working principle of the TP2502N8-G.
Application Fields
The TP2502N8-G is a surface mount MOSFET with an n-channel enhancement structure. This versatile FET is capable of driving loads up to 8 amps, making it a great choice for a number of motor control applications. The Schottky diode available on the FET allows for a low on-resistance even under high frequency switching conditions. This makes the TP2502N8-G ideal for applications such as HVAC, motion control, and stationary motor control.
In addition to motor control applications, the low on-resistance and high power handling of the TP2502N8-G make it suitable for use in DC-DC converters and push-pull amplifiers. This FET is compatible with a variety of circuit voltage ratings, making it a great choice for applications in the automotive, industrial and military markets.
Working Principle
The TP2502N8-G is a MOSFET with an n-channel enhancement structure. This means that when voltage is applied to the gate, it creates an electric field that causes electrons in the semiconductor material to move between the source and the drain, allowing for current flow. This structure creates an efficient switch with a low on-resistance, making it ideal for use in switching applications.
The device also has a Schottky diode which helps to prevent reverse current. This diode is placed between the source and the drain and acts as a "short circuit" if the reverse voltage across the device is greater than the diode\'s breakdown voltage. This diode also helps to reduce capacitance, as it prevents the corner from retaining a charge when the device is switched off.
Conclusion
The TP2502N8-G is a single circuit MOSFET with a number of features that make it suitable for a variety of applications. It is capable of handling up to 8 amps of current, making it suitable for motor control applications. The low on-resistance and high power handling of the device also make it suitable for use in industrial, military and automotive markets. The Schottky diode on the FET prevents reverse current and reduces capacitance, which makes it a great choice for high frequency switching applications.
The specific data is subject to PDF, and the above content is for reference
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