TP2540N3-G

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

TP2540N3-G Application Field and Working Principle

The TP2540N3-G is a N-channel enhancement-mode field-effect transistor (FET) from Toshiba. It is part of their Trench-gate field-effect transistors (TFETs) range, and is designed for low power consumption. It is available in a power PAK MS-012 package—which can achieve improved breakdown voltages while minimizing on-resistance and package parasitics—and offers excellent power efficiency and a broad speed-power sweet spot.

TFETs provide superior performance in comparison to traditional bulk MOSFETs. This is because they employ extra gate control of the semiconductor interface through doping to improve performance. Because N-channel TFETs are better at handling high-current flow than other N-channel FETs, they are ideal for use in low-power applications such as low noise amplifiers (LNA) and power switches.

The TP2540N3-G operates in the Source Sided current control (SSCC) mode, with an on-resistance of 5.5 milliohms and a switching frequency of 100 kHz. It has an operating temperature range of -40°C to +150°C, and a maximum drain-source voltage (VDS) of 40V. The device boasts a maximum power dissipation of 700mA, a transconductance of 230 mS, and a Schottky barrier diode.

The power PAK MS-012 package can reduce the device’s effective resistance (RDSon) by minimizing parasitic capacitance and package resistivity. This allows for improved performance of the device and an extended operating temperature range. The device also uses trench gate technology to give it improved reliability and greater immunity to short circuit failures.

The TP2540N3-G is ideal for applications such as power switches, current sensors, and low-noise amplifiers (LNA). It is especially suitable for portable electronics and highly integrated, low-power ICs since it offers a smaller footprint and improved power efficiency. Additionally, the device can be beneficial for DC/DC converters and LED lighting since it can handle higher currents without sacrificing performance or power efficiency.

The principle of operation for the TP2540N3-G is straightforward. It contains N-type source and drain regions, and a gate region. The gate is controlled by an externally-applied electric signal, which causes the source-gate capacitance to increase when it is applied. This increases the effective transconductance, i.e. the ability of the drain and source to conduct a current. When the gate voltage is above the threshold voltage, the device is considered to be in the “on” state and current flows from the source to the drain.

The TP2540N3-G is a versatile device that offers excellent power efficiency and a wide operating temperature range. It is suitable for a variety of low-power applications, and its power PAK MS-012 package allows for more efficient circuit design by minimizing parasitics. The device is ideal for portable electronics, low-power ICs, and DC/DC converters.

The specific data is subject to PDF, and the above content is for reference