TP2520N8-G Discrete Semiconductor Products

Vgs(th) (Max) @ Id:	2.4V @ 1mA
Package / Case:	TO-243AA
Supplier Device Package:	TO-243AA (SOT-89)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	1.6W (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	125pF @ 25V
Vgs (Max):	±20V
Series:	--
Rds On (Max) @ Id, Vgs:	12 Ohm @ 200mA, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	260mA (Tj)
Drain to Source Voltage (Vdss):	200V
Technology:	MOSFET (Metal Oxide)
FET Type:	P-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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TP2520N8-G Application Field and Working Principle

A TP2520N8-G transistor is an enhancement-mode (E-mode) power field effect transistor (FET) that is available in through-hole and surface-mount packages, allowing it to be used in many different applications in modern circuits. The TP2520N8-G is a single-gate, low-threshold FET, meaning that it requires a lower voltage than traditional field effect transistors (FETs) to turn on or off. This feature makes the TP2520N8-G suitable for use in voltage-controlled switching and power amplifiers, in addition to other sensitive circuits.In terms of its application field, the TP2520N8-G is best suited for controlling high-voltage and high-current applications in power supplies, electronic loads, motor drives, and other high-power circuits. For instance, the TP2520N8-G can be used in switching power supplies, flyback converters, and other converters to switch on and off heavy loads. It can also be used in motor drives and other high-current applications.In terms of its construction, the TP2520N8-G is a single-gate bipolar FET with a floating source, meaning that its source pin is not connected to the substrate and is floating in relation to it. This is an excellent design feature since it allows the TP2520N8-G to take on more current and perform more accurately than other FETs.The working principle of the TP2520N8-G is quite simple. When the gate voltage is sufficiently high, the field effect transistor turns on, allowing a current to flow from the source to the drain. When the gate voltage is reduced, the FET turns off, preventing a current from passing through the FET. The TP2520N8-G is capable of handling very large currents, up to 25A, and is rated for up to 40V. Its on-resistance is typically 0.15 and its gate-drain diode breakdown voltage is 300V. It has a good power dissipation rating of 250W, allowing it to dissipate excess heat to the substrate.The TP2520N8-G is a versatile FET that is widely used in power supplies, electronic load control, motor drives, and other high-power circuits. Its E-mode design allows it to switch on at a lower voltage than traditional FETs, making it ideal for voltage-controlled switching and power amplifiers. Its large current handling capabilities and good power dissipation rating allow it to be used for various high-voltage, high-current applications.

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