TP2510N8-G Discrete Semiconductor Products

Vgs(th) (Max) @ Id:	2.4V @ 1mA
Package / Case:	TO-243AA
Supplier Device Package:	TO-243AA (SOT-89)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	1.6W (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	125pF @ 25V
Vgs (Max):	±20V
Series:	--
Rds On (Max) @ Id, Vgs:	3.5 Ohm @ 750mA, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	480mA (Tj)
Drain to Source Voltage (Vdss):	100V
Technology:	MOSFET (Metal Oxide)
FET Type:	P-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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<p>The TP2510N8-G is a device that is commonly used in applications such as power conversion and switch-mode power supply. It is an excellent choice for those looking to implement efficient and cost-effective solutions. It is a single enhancement-mode trench MOSFET that has an operating voltage range of 10V to 32V with a maximum current rating of 12A. It is compatible with both AC and DC circuits and has a high switching speed.</p><p>The TP2510N8-G is a single-gate, field effect transistor (FET) that is mainly used in switch-mode power supplies. It is a three-port device, consisting of a gate, a source, and a drain. The device can be used in both AC and DC circuits, providing greater flexibility. In general, it is used as a switch, amplifying signals and controlling current flow.</p><p>The transistor works by utilizing a field-effect-transistor (FET) as a switching device. A FET consists of a source terminal, a drain terminal, and a gate terminal. The gate terminal can control the flow of current between the source and the drain by controlling the electric field applied to the channel. When a voltage is applied to the gate terminal, a channel is formed, allowing current to flow between the source and the drain. This process is known as the enhancement-mode, since it amplifies the voltage applied to the gate terminal.</p><p>The TP2510N8-G has a high switching speed and is capable of handling large currents without causing unwanted switching noise. In addition, it has an efficient power factor and very low input capacitance, making it ideal for use in power conversion and switch-mode power supplies. It also has an excellent line regulation, making it ideal for use in applications that require precise voltage levels.</p><p>The TP2510N8-G is a versatile device and is suitable for a variety of applications, from automotive electronics to home appliances. It is a cost-effective and reliable solution, especially when compared to other transistors of similar size and capability.</p><p>In conclusion, the TP2510N8-G is an excellent device for use in switch-mode power supplies and power conversion applications. It is a single-gate, enhancement-mode transistor that can handle large currents without causing unwanted switching noise and has an efficient power factor and low input capacitance. It also has an excellent line regulation, making it ideal for use in applications that require precise voltage levels.</p>

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