Allicdata Part #: | TP2535N3-G-ND |
Manufacturer Part#: |
TP2535N3-G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microchip Technology |
Short Description: | MOSFET P-CH 350V 0.086A TO92-3 |
More Detail: | P-Channel 350V 86mA (Tj) 740mW (Ta) Through Hole T... |
DataSheet: | TP2535N3-G Datasheet/PDF |
Quantity: | 884 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 350V |
Current - Continuous Drain (Id) @ 25°C: | 86mA (Tj) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 25 Ohm @ 100mA, 10V |
Vgs(th) (Max) @ Id: | 2.4V @ 1mA |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 125pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 740mW (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-92-3 |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) |
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The TP2535N3-G is a 3A, N-Channel MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) that addresses a wide range of applications. It\'s a voltage-controlled device that is composed of a channel of n-type (or negative) MOSFET laid down on a semiconductor substrate. Its gate voltage is controlled by a capacitor in order to limit the amount of current passing through, making this device very useful for high-current applications.
This device is a great choice for audio power amplifier designs, as its low capacitance will help minimize distortion in a signal path without adding too much noise. Additionally, its low internal gate resistance also helps maximize efficiency in power amplifier designs. The device may also be used in DC-to-DC conversion applications where high switching frequencies are required. It can also be used in power management circuits, where it is employed as a switch for high-current applications.
In its most basic form, the TP2535N3-G works by allowing current to flow from its drain terminal to its source terminal when a positive gate voltage is applied. This positive gate voltage effectively "opens" the channel between the two terminals, allowing current to flow. When the gate voltage is removed, the channel closes and current is prevented from flowing. This enables tremendous control over the voltage and current flow in a circuit.
The TP2535N3-G is an ideal choice for many high-current applications because of its low capacitance, low internal gate resistance, and large current handling capabilities. It has a maximum on-state resistance of 45 mΩ, and its low-voltage drive capability ensures that the device is suitable for a wide variety of voltage and power needs. The device is also quite durable, with a 20176-hour life expectancy at 85°C.
The TP2535N3-G is an excellent option for any number of circuit designs requiring high-current capability. Its wide range of applications make it an ideal choice for many kinds of audio, power management, and high-frequency switching circuits. This device is sure to continue to be a top-tier choice for a variety of circuit designs as long as its characteristics remain reliable.
The specific data is subject to PDF, and the above content is for reference
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