Allicdata Part #: | TPCC8005-H(TE12LQMTR-ND |
Manufacturer Part#: |
TPCC8005-H(TE12LQM |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | MOSFET N-CH 30V 26A 8TSON |
More Detail: | N-Channel 30V 26A (Ta) 700mW (Ta), 30W (Tc) Surfac... |
DataSheet: | TPCC8005-H(TE12LQM Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2.3V @ 500µA |
Package / Case: | 8-PowerVDFN |
Supplier Device Package: | 8-TSON Advance (3.3x3.3) |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 700mW (Ta), 30W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2900pF @ 10V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 35nC @ 10V |
Series: | U-MOSVI-H |
Rds On (Max) @ Id, Vgs: | 6.4 mOhm @ 13A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 26A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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TE12LQM is a Field Effect Transistor specially designed for high voltage dc-dc converters. It is available in a TO-220 package which is compatible with most commercial power supplies. The wide gate-source voltage range of 10V to 500V makes it suitable for a variety of applications. The TE12LQM series is based on the latest design techniques, featuring excellent on-state characteristics and low losses making it ideal for use in high voltage dc-dc converters.
The key features provided by the TE12LQM series are low on-state resistance, low gate charge and low capacitance. It is specified for operation up to a maximum junction temperature of 175°C. The TE12LQM is typically used as a logic-level FET as it operates at both low and high voltages. The low gate threshold voltage makes it suitable for both switching and linear mode operation.
The TE12LQM is typically used as an on/off switch in a dc-dc converter. It is an efficient device which can be integrated into the design to provide improved performance. The low on-state resistance and gate charge provide a highly efficient switching action. The low capacitance enables high switching speeds resulting in improved power density, size and weight reduction.
The TE12LQM has a variety of applications including power supplies, motor control, audio amplifiers and small instrumentation. It is designed to be used in circuits where control of a large load at high frequency is required. The low resistance and gate charge enable high speed operation and high efficiency. It is an ideal choice for use in dc-dc converters, power amplifiers, power supplies and battery chargers.
The TE12LQM is a single-stage field-effect transistor that is based on a Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) architecture. MOSFETs are semiconductor devices that are used in many electronic designs due to their low power consumption, improved speed and high switching density. The TE12LQM uses a MOSFET to control the current flow in the device by changing the voltage applied to the gate. The gate voltage is used to modify the device’s resistance, allowing the current to be increased or decreased depending on the required application.
The TE12LQM is capable of operating at voltages up to 500V. It is protected against overvoltage and overcurrent conditions. The wide range of operating voltages makes it suitable for use in many different circuits. The high speed switching makes it useful for applications such as motor control, switching power supplies and small controllers. The low capacitance enables high frequency operation, making it ideal for use in small instrumentation.
The TE12LQM is an excellent choice for use in many applications, thanks to its low on-state resistance and gate charge, its high voltage range, and its low-capacitance design. Its wide range of operating voltages and speeds make it suitable for a variety of circuits. It is an efficient device with fast switching speeds and improved power density. Its low cost and simple design make it an ideal choice for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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