TPCC8065-H,LQ(S

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The TPCC8065-H,LQ is a single N-Channel Enhancement Mode Field Effect Transistor (FET) manufactured by Toshiba. It is used in applications requiring a wide range of pulse current handling and low on-resistance.

The TPCC8065-H,LQ can be used in various electronic devices, including amplifiers, switches, and power supplies. It is particularly well-suited for use in high-current, power-management applications, as it offers excellent frequency characteristics, low total gate charge, and low on-resistance.

In a typical circuit using this FET, the source is connected to ground and the drain is connected to the power supply. The gate is then driven with a suitable voltage, which in turn controlling the current passing between the source and drain.

The FET has a Gate Cutoff Voltage of 12V, a Drain Cutoff Current of 5mA, and a Positive Gate/Source Breakdown Voltage of 15V. The maximum Drain Source Voltage The FET can handle is 30V, the continuous drain current is 30mA, and the maximum Transconductance is 3000 μS.

The FET has a Gate Threshold Voltage of +2.0V and a Gate Source On Voltage of + 6.55V. It also has a Maximum Drain Source On-State Resistance of 0.08 Ω and a Gate Source Leakage Current of 20 nA.

The TPCC8065-H,LQ has a maximum power dissipation of 700 mW. It is a RoHS compliant device, and has a Lead Free Finish. It is UL recognized and ESD protected.

The FET can be used to control the flow of current in a wide range of electronic applications. Its low on-resistance, power dissipation and gate leakage current, high operating temperature range and low gate charge, make it an excellent choice for many applications.

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