Allicdata Part #: | TPCC8103(TE12LQM)CT-ND |
Manufacturer Part#: |
TPCC8103(TE12L,QM) |
Price: | $ 0.98 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | MOSFET P-CH 30V 18A 8TSON |
More Detail: | P-Channel 30V 18A (Ta) 700mW (Ta), 27W (Tc) Surfac... |
DataSheet: | TPCC8103(TE12L,QM) Datasheet/PDF |
Quantity: | 2192 |
1 +: | $ 0.88830 |
10 +: | $ 0.78624 |
100 +: | $ 0.62162 |
500 +: | $ 0.48206 |
1000 +: | $ 0.38058 |
Vgs(th) (Max) @ Id: | 2V @ 1mA |
Package / Case: | 8-PowerVDFN |
Supplier Device Package: | 8-TSON Advance (3.3x3.3) |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 700mW (Ta), 27W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1600pF @ 10V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 38nC @ 10V |
Series: | U-MOSV |
Rds On (Max) @ Id, Vgs: | 12 mOhm @ 9A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 18A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Discontinued at Digi-Key |
Packaging: | Cut Tape (CT) |
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The TPCC8103(TE12L,QM) is an advanced version of a single-type Field Effect Transistor (FET), a type of transistor known for its electrical properties, which are beneficial for specialized uses. This transistor, developed and made by Toshiba in Japan, consists of an octagonal-shaped silicon substrate, which acts as a gate. The gate is the main switch of the transistor, allowing electricity to flow freely, or to be blocked, depending on the setting of the gate. By using a voltage source, the user can change the setting of the gate, thus controlling the flow of electricity.
The TPCC8103(TE12L,QM) offers many advantages over traditional transistors. For example, it can handle multiple signals, both analog and digital, with much greater speed and accuracy than a normal transistor. It has a low power dissipation and switch on/off time, allowing for smaller circuit components, hence saving board space and cost. Its insulation is superior to most transistors, and the working temperature range is wide, from -55 to +150 °C. It also has a low noise characteristics, making it ideal for use in audio equipment, such as amplifiers and speakers.
The working principle of the TPCC8103(TE12L,QM) is relatively straightforward. When a voltage source is connected to the gate, electrons within the gate region become activated. These activated electrons cause the gate to be polarized and the resistance of the drain current to be lowered. This enhances the current flow between the source and drain, allowing electricity to flow freely. By changing the voltage source, the user can control the amount of current that flows, which is the basis of the transistor operation.
The main application of the TPCC8103(TE12L,QM) is in radio-frequency amplifiers (RFAs). The devices are used in this application because they require minimum signal noise and distortion, as well as excellent linearity. They are also used in switching power noise filter circuits, as they can handle large pulse currents while maintaining low power dissipation. Moreover, the integrated circuit (IC) versions of the TPCC8103(TE12L,QM) are used in power management appliances, motor control systems, and many other sensitive applications due to their superior insulation and noise canceling capabilities.
In conclusion, the TPCC8103(TE12L,QM) is a single-type advanced FET transistor with octagonal silicon-substrate gate, offering superior performance in many electrical applications. Its superior insulation, low noise characteristics, low power dissipation, and switch on/off time make it ideal for use in RF amplifiers, switching power noise filter circuits, power management appliances and many other sensitive applications. Its working principle is straightforward and is operated by a voltage source, allowing the user to control the flow of current.
The specific data is subject to PDF, and the above content is for reference
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