Allicdata Part #: | TPCC8006-H(TE12LQMTR-ND |
Manufacturer Part#: |
TPCC8006-H(TE12LQM |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | MOSFET N-CH 30V 22A 8TSON |
More Detail: | N-Channel 30V 22A (Ta) 700mW (Ta), 27W (Tc) Surfac... |
DataSheet: | TPCC8006-H(TE12LQM Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Specifications
Vgs(th) (Max) @ Id: | 2.3V @ 200µA |
Package / Case: | 8-PowerVDFN |
Supplier Device Package: | 8-TSON Advance (3.3x3.3) |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 700mW (Ta), 27W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2200pF @ 10V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 27nC @ 10V |
Series: | U-MOSVI-H |
Rds On (Max) @ Id, Vgs: | 8 mOhm @ 11A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 22A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
Description
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TE12LQM is a field effect transistor (FET) manufactured by Texas Instruments. It is a component used in electronic circuits to control electrical signals. The FET is a semiconductor device that amplifies and controls the flow of electrical current. TE12LQM is also known as a high-power MOSFET, which stands for metal-oxide semiconductor field effect transistor. The device is designed for use in switch amplifiers, power supplies, and other high-current applications such as robotics, medical equipment, and power systems.The TE12LQM is a monolithic transistor, meaning it is comprised of both the source and drain terminals (p and n type) on a single silicon substrate. This allows for a much smaller footprint than conventional FETs and allows for higher current handling. The device is made up of several layers including the gate, source, drain, substrate, and body. The FET is a three terminal device, meaning it has a gate, source, and drain. The gate terminal is connected to the substrate and provides control over the other two terminals, the source and drain. The source and drain, both made up of n type and p type regions, control the current flow in and out of the effective channel created by the gate.The TE12LQM operates using voltage control, rather than current control, which is what is traditionally used. This makes the device more efficient and increases its current handling capabilities. Voltage control works by varying the voltage applied to the gate terminal, which in turn controls the amount of current that passes through the source and drain terminals. The higher the voltage applied to the gate, the greater the current that can flow. This makes the TE12LQM an ideal choice for applications that require high current handling and precise voltage control, such as robotics, medical equipment, and power systems.The TE12LQM also has superior thermal performance, due to its ability to dissipate heat more effectively than other FETs. This is accomplished by its unique architecture, which allows for more efficient heat dissipation. Additionally, the FET is designed to operate at higher temperatures than other similar devices, making it an ideal choice for applications in extreme environmental conditions.In conclusion, the TE12LQM is a field effect transistor manufactured by Texas Instruments. It is designed to be used in applications that require precise voltage control and high current handling capabilities, such as robotics, medical equipment, and power systems. Its superior thermal performance and monolithic construction make it an ideal choice for these applications.\end{div>
The specific data is subject to PDF, and the above content is for reference
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